Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study

Zhiwei Zhang; Guoqing Miao; Hang Song; Hong Jiang; Zhiming Li; Dabing Li; Xiaojuan Sun; Yiren Chen

doi:10.4236/wjet.2015.34B002

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World Journal of Engineering and Technol... > Vol.3 No.4B, November 2015

Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study ()

Zhiwei Zhang, Guoqing Miao^*, Hang Song, Hong Jiang, Zhiming Li, Dabing Li, Xiaojuan Sun, Yiren Chen

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.

DOI: 10.4236/wjet.2015.34B002 PDF HTML XML 3,475 Downloads 3,845 Views

Abstract

In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector are also compared and discussed. GaAs-based device shows a significant enhancement in detector with a better performance for a InGaAs photodetector compared to InP- based device. In addition, our results show that the device performance is influenced by the conduction band offset. This work proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high performance detector with optimally tuned band gap.

Keywords

InGaAs Detector, Near-Infrared, High Indium Content, Dark Current

Share and Cite:

Zhang, Z. , Miao, G. , Song, H. , Jiang, H. , Li, Z. , Li, D. , Sun, X. and Chen, Y. (2015) Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study. World Journal of Engineering and Technology, 3, 6-10. doi: 10.4236/wjet.2015.34B002.

Conflicts of Interest

The authors declare no conflicts of interest.

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