The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO2 Structures

Abstract Full-Text HTML XML Download Download as PDF (Size:309KB) PP. 1657-1662
DOI: 10.4236/jmp.2015.611167    2,324 Downloads   2,556 Views  


The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.

Cite this paper

Sahakyan, A. , Yeritsyan, H. , Harutunyan, V. , Karayan, H. and Sahakyan, V. (2015) The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO2 Structures. Journal of Modern Physics, 6, 1657-1662. doi: 10.4236/jmp.2015.611167.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Zhukov, A.E. (2007) Lasers Based on Semiconductor Nanostructures. St. Petersburg LLC “Tekhnomed”, Moscow, 304. (In Russian)
[2] Dragunov, V.P., Neizvestny, I.G. and Gridchin, V.A. (2006) Fundamentals of Nanoelectronics. Fizmatgiz, Moscow, 496. (In Russian)
[3] Karayan, H.S. (2011) Defining of the Marginal State of a Quantum System at its Conditionally Cyclic Evolution. Proceedings of the International Conference Electron, Positron, Neutron and X-Ray Scattering under the External Influences, Yerevan-Meghri, 215-219. (In Russian)
[4] Mitchell, J.P. and Wilson, D.K. (1967) The Bell System Technical Journal, 46, 1-81.
[5] Sah, C.T. (1976) IEEE Transactions on Nuclear Science, 5-23, 1563-1568.
[6] Eritsyan, G.N., Mordkovich, V.N., Oganessyan, A.S. and Sahakyan, A.A. (1987) Crystal Lattice Defects and Amorphous Materials, 14, 256-260.
[7] Winokur, P.S., McGarrity, L.M. and Boesch, H.E. (1976) IEEE Transactions on Nuclear Science, 5-23, 1580-1585.
[8] McCaughan, V. (1973) Journal of Applied Physics, 44, 2008-2013.
[9] Parchinsky, P.B., Vlasov, S.I. and Nasirov, A.A. (2004) Semiconductors, 38, 1345-1348.
[10] Nicollian, E.N. and Goetzberger, A. (1967) The Bell System Technical Journal, 46, 1055-1134.

comments powered by Disqus

Copyright © 2020 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.