Investigation of the Effect of Film Thickness and Heat Treatment on the Optical Properties of TeSeSn Thin Films


Glassy substrates TeSeSn thin films were thermally evaporated onto chemically cleaned glass. The as-deposited (as-prepared) and annealed thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical transmission. The optical absorption of the as-prepared and annealed TeSeSn thin films is studied in the wavelength range of 300 nm - 900 nm. The direct optical energy gap (Eg) increases from 1.989 to 2.143 eV with increasing the thickness of the as-prepared films from 100 to 200 nm. The annealed TeSeSn films showed a decrease in the optical energy gap with increasing the annealing temperature. The effect of heat treatment on the lattice dielectric constant (εL) and carrier concentration (N) are also studied.

Share and Cite:

Alwany, A. , Samir, O. , Algradee, M. , Hafith, M. and Abdel-Rahim, M. (2015) Investigation of the Effect of Film Thickness and Heat Treatment on the Optical Properties of TeSeSn Thin Films. World Journal of Condensed Matter Physics, 5, 220-231. doi: 10.4236/wjcmp.2015.53023.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Pfister, G. (1979) Electronic Properties of Chalcogenide Glasses and Their Use in Xerography. Journal of Electronic Materials, 8, 789-837.
[2] Katsuyama, T., Satoh, S. and Matsumura, H. (1992) Scattering Loss Characteristics of Selenide-Based Chalcogenide Glass Optical Fibers. Journal of Applied Physics, 71, 4132.
[3] Kamaruizaman, B.M.Z., Juhasz, C. and Vaezi-Nejad, S.M. (1992) Application of Thermally Stimulated Discharge Techniques to a-Se: Te/Se Double-Layer Photoreceptors. Journal of Materials Science, 27, 4316-4322.
[4] Savage, J.A., Webber Webber, P.J. and Pitt, A.M. (1980) The Potential of Ge-As-Se-Te Glasses as 3 - 5 μm and 8 - 12 μm Infrared Optical Materials. Infrared Physics, 20, 313-320.
[5] Reddy, K.V. and Bhatnagar, A.K. (1992) Electrical and Optical Studies on Amorphous Se-Te Alloys. Journal of Physics D: Applied Physics, 25, 1810.
[6] Terao, M., Nishida, T., Miyauchi, Y., Nakao, T., Kaku, T., Horigome, S., Ojima, M., Tsunoda, Y., Sugita, Y. and Ohta, Y. (1985) Sn-Te-Se Phase Change Recording Film For Optical Disks. SPIE Proceedings, 529, 46.
[7] Terao, M., Nlshlda, T., Mlyauchl, Y., Kaku, T., Hongome, S. and Suglta, Y. (1989) Sn-Te-Se Films for Reversible Phase-Change Optical Recording. Japanese Journal of Applied Physics, 28, 804.
[8] Hou, L.S., Gu, D.H. and Can, F.X. (1987) Thermal and Laser-Induced Phase Changes of Te-Se-M(M=In,Sn,Sb) Thin Films. Journal of Non-Crystalline Solids, 95-96, 525-532.
[9] Dimitrov, D.Z. and Kozhukharov, V.S. (1992) Laser-Deposited Thin TeSeSn Alloy Films. Thin Solid Films, 209, 80-83.
[10] Abdel-Rahim, M.A., Hafiz, M.M., Elwhab, A. and Alwany, B. (2012) Influence of Annealing on the Structure and Optical Properties of Zn40Se60 Thin Films. Optics & Laser Technology, 44, 1116-1121.
[11] Laugier, J. and Bochu, B. (2004) Checkcell, LMGP-Suite of Programs for the Interpretation of X-Ray Experiments. Ensp/Laboratoire des Materiaux et du Genie, Physique, Saint Martin d’Heres.
[12] Scherrer, P. (1918) Bestimmung der Grösse und der Inneren Struktur von Kolloidteilchen Mittels Röntgenstrahlen, Nachrichten von der Gesellschaft der Wissenschaften, Göttingen. Mathematisch-Physikalische Klasse, 2, 98-100.
[13] Williamson, G.K. and Hall, W.H. (1953) X-Ray Line Broadening from Filed Aluminium and Wolfram. Acta Metallurgica, 1, 22-31.
[14] Mulama, A.A., Mwabora, J.M., Oduor, A.O., Muiva, C.M. and Muthoka, B. (2014) Investigation of the Effect of Film Thickness on the Optical Properties of Amorphous Se85-xTe15Sbx Thin Films. Africa Journal of Physical Sciences, 1, 38-42.
[15] Rusu, G.I., Diciu, M., Pîrghie, C. and Popa, E.M. (2007) Structural Characterization and Optical Properties of ZnSe Thin Films. Applied Surface Science, 253, 9500-9505.
[16] Tauc, J. (1974) Amorphous and Liquid Semiconductor. Plenum, New York.
[17] Shamshad, A., Khan, M., Zulfequar, Z., Khan, H. and Husain, M. (2003) Effects of Annealing on the Optical Band Gap of Amorphous Ga5Se95-xSbx during Crystallization. Journal of Modern Optics, 50, 51-62.
[18] Rusu, G.I., Ciupina, V., Popa, M.E., Prodan, G., Rusu, G.G. and Baban, C. (2006) Microstructural Characterization and Optical Properties of ZnSe Thin Films. Journal of Non-Crystalline Solids, 352, 1525-1528.
[19] El-Wahabb, E.A., El-Samanoudy, M.M. and Fadel, M. (2001) Effect of Thickness and Heat Treatment on the Electrical and Optical Properties of (Ge2S3)1 (Sb2Se3)1 Thin Films. Applied Surface Science, 174, 106-117.
[20] Theye, M.L. (1974) Optical Properties of a-Ge, a-Si and a-III-V Compounds. Proceedings of the 5th International Conference on Amorphous and Liquid Semiconductors, Vol. 1, Garmisch-Partenkirchen, 3-8 September 1973, 479-498.
[21] Gosain, D.P., Shimizu, T., Ohmura, M., Suzuki, M., Bando, T. and Okano, S. (1991) Some Properties of Sb2 Te3-x Sex for Nonvolatile Memory Based on Phase Transition. Journal of Materials Science, 26, 3271-3274.
[22] El-Sayed, S.M. (2002) Glass Formation and Local Arrangement of Chalcogenide of Ga40Se60 and Ga33Se60Te7. Materials Chemistry and Physics, 78, 262-270.
[23] Mott, N.F. and Davis, E.A. (1971) Electronic Processes in Non-Crystalline Materials. Clarenden, Oxford.
[24] Ovshinsky, S.R. and Adler, D. (1978) Local Structure, Bonding, and Electronic Properties of Covalent Amorphous Semiconductors. Journal of Contemporary Physics, 19, 109-126.
[25] Hasegawa, S., Yazaia, S. and Shimizu, T. (1978) Effects of Annealing on Gap States in Amorphous Si Films. Solid State Communications, 26, 407-410.
[26] Chaudhuri, S., Biswas, S.K., Choudhury, A. and Goswami, K. (1983) Variation of Optical Gap of Thick Amorphous Selenium Film on Heat Treatment. Journal of Non-Crystalline Solids, 54, 179-182.
[27] Wemple, S.H. and DiDomenico Jr., M. (1971) Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials. Physical Review B, 3, 1338.
[28] Wemple, S.H. (1973) Refractive-Index Behavior of Amorphous Semiconductors and Glasses. Physical Review B, 7, 3767.
[29] Malik, M.M., Zulfequar, M., Kumar, A. and Husain, M. (1992) Effect of Indium Impurities on the Electrical Properties of Amorphous Ga30Se70. Journal of Physics: Condensed Matter, 4, 331-8338.
[30] Das, V.D. and Mallik, R.C. (2001) Study of Scattering of Charge Carriers in Thin Films of (Bi0.25Sb0.75)2Te3 Alloy with 2% Excess Te. Materials Research Bulletin, 37, 1961-1971.
[31] Abdel-Aziz, M.M., Yahia, I.S., Wahab, L.A., Fadel, M. and Afifi, M.A. (2006) Determination and Analysis of Dispersive Optical Constant of TiO2 and Ti2O3 Thin Films. Applied Surface Science, 252, 8163-8170.

Copyright © 2022 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.