Berry Approach to Intrinsic Anomalous Hall Conductivity in Dilute Magnetic Semiconductors (Ga1-xMnxAs)


We develop a model Hamiltonian to treat intrinsic anomalous Hall conductivity in dilute magnetic semiconductor (DMS) of type (III, Mn, V) and obtain the Berry potential and Berry curvature which are responsible for intrinsic anomalous Hall conductivity in Ga1-x MnxAs DMS. Based on Kubo formalism, we establish the relation between Berry curvature and intrinsic anomalous Hall conductivity. We find that for strong spin-orbit interaction intrinsic anomalous Hall conductivity is quantized which is in agreement with recent experimental observation. In addition, we show that the intrinsic anomalous Hall conductivity (AHC) can be controlled by changing concentration of magnetic impurities as well as exchange field. Since Berry curvature related contribution of anomalous Hall conductivity is believed to be dissipationless, our result is a significant step toward achieving dissipationless electron transport in technologically relevant conditions in emerging of spintronics.

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Mekonnen, S. and Singh, P. (2015) Berry Approach to Intrinsic Anomalous Hall Conductivity in Dilute Magnetic Semiconductors (Ga1-xMnxAs). World Journal of Condensed Matter Physics, 5, 179-186. doi: 10.4236/wjcmp.2015.53019.

Conflicts of Interest

The authors declare no conflicts of interest.


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