Direct Structural Evidences of Epitaxial Growth Ge1-X MnX Nanocolumn Bi-Layers on Ge(001)
Thi Giang Le
Hong Duc University, Thanh Hoa City, Vietnam.
DOI: 10.4236/msa.2015.66057   PDF   HTML   XML   3,584 Downloads   4,297 Views   Citations


Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of thin films. Based on the observation of changes in RHEED patterns during nanocolumn growth, we used a real-time control approach to realize multilayer structures that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy (TEM) has been used to investigate the structural properties of the GeMn nanocolumns and GeMn/Ge nanocolumns bi-layers samples.

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Le, T. (2015) Direct Structural Evidences of Epitaxial Growth Ge1-X MnX Nanocolumn Bi-Layers on Ge(001). Materials Sciences and Applications, 6, 533-538. doi: 10.4236/msa.2015.66057.

Conflicts of Interest

The authors declare no conflicts of interest.


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