Influence of a Semiconductor Gap’s Energy on the Electrical Parameters of a Parallel Vertical Junction Photocell

Nfally Dieme

Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal.

DOI: 10.4236/epe.2015.75020                

Abstract

The present work is a theoretical study on a parallel vertical junction solar cell under a multi-spectral illumination in static regime. The density of the minority charge carriers was determined based on the diffusion equation. Photocurrent and photovoltage are deducted from such density. All these parameters are studied taking into account the influence of the gap energy (Eg).

Keywords

Vertical Junction, Energy Gap, Photocurrent Density, Photovoltage

Conflicts of Interest

The authors declare no conflicts of interest.

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