Fabrication of CdS/SnS Heterojunction for Photovoltaic Application

Hongnan Li, Shuying Cheng^*, Jie Zhang, Weihui Huang, Haifang Zhou, Hongjie Jia

Institute of Micro-Nano Devices & Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China.

DOI: 10.4236/wjcmp.2015.51002                

Abstract

SnS/CdS heterojunction is a promising system for photovoltaic application. SnS thin films were thermally evaporated onto CdS/ITO coated glass substrates. The structure of the device was glass/ ITO/CdS/SnS/In/Ag and I-V curves of the fabricated devices were measured under dark and illuminated conditions, respectively. We discussed the relationship of the thickness and annealing temperature of CdS buffer layers with the performance of SnS/CdS heterojunctions. The optimum thickness and annealing temperature of the CdS buffer layers were 50 nm and 350°C, respectively. The best device had a conversion efficiency of 0.0025%.

Keywords

SnS Films, Heterojunction, Thermally Vacuum-Evaporation, I-V Curves

Conflicts of Interest

The authors declare no conflicts of interest.

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