Numerical Simulations of Nonlinear Interaction of Space Charge Waves in Microwave and Millimeter Wave Range in n-InN Films Using Negative Differential Conductivity

Abel Garcia-Barrientos; Volodymyr Grimalsky

doi:10.4236/mnsms.2014.43015

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Modeling and Numerical Simulation of Mat... > Vol.4 No.3, July 2014

Numerical Simulations of Nonlinear Interaction of Space Charge Waves in Microwave and Millimeter Wave Range in n-InN Films Using Negative Differential Conductivity ()

Abel Garcia-Barrientos, Volodymyr Grimalsky

CIICAp, Autonomous University of Morelos State (UAEM), Morelos, México.
Electronics and Computer Science Department, Research Center on Information Technology and Systems, Autonomous University of Hidalgo State (UAEH), Hidalgo, México.

DOI: 10.4236/mnsms.2014.43015 PDF HTML XML 3,220 Downloads 4,109 Views

Abstract

Numerical simulations of nonlinear interaction of space charge waves in microwave and millimeter wave range in n-InN films have been carried out. A micro- and millimeter-waves frequency conversion using the negative differential conductivity phenomenon is carried out when the harmonics of the input signal are generated. An increment in the amplification is observed in n-InN films at essentially at high-frequencies f < 450 GHz, when compared with n-GaAs films f < 44 GHz. This work provides a way to achieve a frequency conversion and amplification of micro- and millimeter-waves.

Keywords

Space Charge Waves, InN Film, Negative Differential Conductivity

Share and Cite:

Garcia-Barrientos, A. and Grimalsky, V. (2014) Numerical Simulations of Nonlinear Interaction of Space Charge Waves in Microwave and Millimeter Wave Range in n-InN Films Using Negative Differential Conductivity. Modeling and Numerical Simulation of Material Science, 4, 136-142. doi: 10.4236/mnsms.2014.43015.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	Wu, J., Walukiewicz, W., Shan, W., Yu, K.M., Ager III, J.W., Haller, E.E., Lu, H. and Schaff, W.J. (2002) Effects of the Narrow Band Gap on the Properties of InN. Physical Review B, 66, Article ID: 201403. http://dx.doi.org/10.1103/PhysRevB.66.201403
[2]	Wu, J., Walukiewicz, W., Yu, K.M., Ager III, J.W., Haller, E.E., Lu, H., Schaff, W.J., Saito, Y. and Nanishi, Y. (2002) Unusual Properties of the Fundamental Band Gap of InN. Applied Physics Letters, 80, 3967-3969.
[3]	Garcia, A., Grimalsky, V., Gutierrez, E. and Palankovski, V. (2009) Nonstationary Effects of the Space Charge in Semiconductor Structures. Journal of Applied Physics, 105, Article ID: 074501. http://dx.doi.org/10.1063/1.3093689
[4]	Garcia-Barrientos, A. and Palankovski, V. (2011) Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity. Applied Physics Letters, 98, 072110-1- 072110-3.
[5]	Koshevaya, S.V., Grimalsky, V.V., Garcia-B, A. and Diaz-A, F. (2012) Amplification and Nonlinear Interaction of Space Charge Waves of Microwave Band in Heterogeneous Gallium Nitride Films. Radioelectronics and Communications Systems, 55, 289-298. http://dx.doi.org/10.3103/S0735272712070011
[6]	Schley, P., Goldhahn, R., Gobsch, G., Feneberg, M., Thonke, K., Wang, X. and Yoshikawa, A. (2009) Influence of Strain on the Band Gap Energy of Wurtzite InN. Physica Status Solidi (b), 246, 1177-1180. http://dx.doi.org/10.1002/pssb.200880924
[7]	Beck, A.H.W. (1958) Space-Charge Waves and Slow Electromagnetic Waves. Pergamon, New York.
[8]	Dean, R.H., Dreeben, A.B., Kaminski, J.F. and Triano, A. (1970) Travelling-Wave Amplifier Using Thin Epitaxial GaAs Layer. Electronics Letters, 6, 775-776.
[9]	Scott, A. (1970) Active and Nonlinear Wave Propagation in Electronics. John Wiley & Sons, New York.
[10]	Carnez, B., Cappy, A., Kaszynskii, A., Constant, E. and Salmer, G. (1980) Modeling of a Submicrometer Gate Field-Effect Transistor Including Effects of Nonstationary Electron Dynamics. Journal of Applied Physics, 51, 784-790. http://dx.doi.org/10.1063/1.327292
[11]	Mikhailov, A.I. (2000) Experimental Study of the Parametric Interaction between Space-Charge Waves in Thin-Film GaAs-Based Semiconductor Structures. Technical Physics Letters, 26, 217-219. http://dx.doi.org/10.1134/1.1262796
[12]	Lu, H., Schaff, W.J., Eastman, L.F. and Stutz, C.E. (2003) Surface Charge Accumulation of InN Films Grown by Molecular-Beam Epitaxy. Applied Physics Letters, 82, 1736. http://dx.doi.org/10.1063/1.1562340
[13]	Tansley, T. and Foley, C. (1984) Electron Mobility in Indium Nitride. Electronics Letters, 20, 1066-1068. http://dx.doi.org/10.1049/el:19840729
[14]	Yamamoto, A., Shin-ya, T., Sugiura, T. and Hashimoto, A. (1998) Electron Mobility in Indium Nitride. Journal of Crystal Growth, 189/190, 461-465. http://dx.doi.org/10.1016/S0022-0248(98)00331-5
[15]	Franssen, G., Suski, T., Perlin, P., Teisseyre, H., Khachapuridze, A., Dmowski, L.H., Plesiewicz, J.A., Kaminska, A., Kurouchi, M., Nanishi, Y., Lu, H. and Schaff, W. (2006) Band-to-Band Character of Photoluminescence from InN and In-Rich InGaN Revealed by Hydrostatic Pressure Studies. Applied Physics Letters, 89, Article ID: 121915. http://dx.doi.org/10.1063/1.2356994
[16]	Polyakov, V. and Schwierz, F. (2006) Low-Field Electron Mobility in Wurtzite InN. Applied Physics Letters, 88, 032101-1-032101-3. http://dx.doi.org/10.1063/1.2166195
[17]	Bougrov, V., Levinshtein, M.E., Rumyantsev, S.L. and Zubrilov, A. (2001) Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. In: Levinshtein, M.E., Rumyantsev, S.L. and Shur M.S., Eds., John Wiley & Sons, Inc., New York, 1-30.