Enhancement of InGaN-Based Light Emitting Diodes Performance Grown on Cone-Shaped Pattern Sapphire Substrates

DOI: 10.4236/msce.2014.27006   PDF   HTML   XML   2,335 Downloads   3,807 Views   Citations


To enhance light extraction effciency, high-quality InGaN-based light emitting diodes (LED) was grown on cone-shaped patterned sapphire (CPSS) by using metal organic chemical vapor deposition (MOCVD). From the transmission electron microscopy (TEM) observation, the CPSS was confirmed to be an efficient way to reduce the threading dislocation density in the GaN epilayer. A sharp and high intensity Photoluminescence (PL) for LED on CPSS at 457 nm compared to LED on unpattern planar sapphire substrates (USS) indicates that the crystalline quality was improved significantly and the internal reflection on the cones of the substrate was enhanced. The output power of the LED on CPSS is higher than that of LED on USS. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the CPSS.

Share and Cite:

Wang, H. , Li, Y. and Zhang, P. (2014) Enhancement of InGaN-Based Light Emitting Diodes Performance Grown on Cone-Shaped Pattern Sapphire Substrates. Journal of Materials Science and Chemical Engineering, 2, 53-58. doi: 10.4236/msce.2014.27006.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Nakamura, S., Senoh, M., Nagahama, S., et al. (1997) InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices. Japanese Journal of Applied Physics, 36, L1568-L1571.
[2] Chang, S.J., Kuo, C.H., Su, Y.K., et al. (2002) 400 nm InGaN/GaN and In-GaN/AlGaN Multiquantum Well Light-Emitting Diodes. Journal of Selected Topics in Quantum Electronics, 8, 744-748.
[3] Schubert, E.F. and Kim, J.K. (2005) Solid-State Light Sources Getting Smart. Science, 308, 1274-1278.
[4] Oh, T.S., Lee, K.J., Lim, K.Y., et al. (2006) Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios. Journal of the Korean Physical Society, 49, S745-S749.
[5] Kapolnek, D., Keller, S., Vetury, R., et al. (1997) Anisotropic Epitaxial Lateral Growth in GaN Selective Area Epitaxy. Applied Physics Letters, 71, 1204-1206.
[6] Iida, K., Kawashima, T., Miyazaki, A., et al. (2004) Laser Diode of 350.9 nm Wavelength Grown on Sapphire Substrate by MOVPE. Journal of Crystal Growth, 272, 270-273.
[7] Lithicum, K., Gehrke, T., Thomson, D., et al. (1999) Pendeoepitaxy of Gallium Nitride Thin Films. Applied Physics Letters, 75, 196-198.
[8] Chen, Y., Schneider, R., Wang, S.Y., et al. (1999) Dislocation Reduction in GaN Thin Films via Lateral Overgrowth from Trenches. Applied Physics Letters, 75, 2062-2064.
[9] Horng, R.H., Wang, W.K., Huang, S.C., et al. (2007) Growth and Cha-racterization of 380-nm InGaN/AlGaN LEDs Grown on Patterned Sapphire Substrates. Journal of Crystal Growth, 298, 219-222.
[10] Yamada, K.M., Mitani, T., Narukawa, Y., et al. (2002) InGaN-Based Nearultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode. Japanese Journal of Applied Physics, 41, L1431-L1433.
[11] Hsu, Y.P., Chang, S.J., Su, Y.K., et al. (2004) Lateral Epitaxial Patterned Sapphire InGaN/GaN MQW LEDs. Journal of Crystal Growth, 261, 466-470.
[12] Lee, J.H., Oh, J.T., Park, J.S., et al. (2006) Improvement of Luminous Intensity of InGaN Light Emitting Diodes Grown on Hemispherical Patterned Sapphire. Physica Status Solidi (C), 3, 2169-2173.
[13] Lee, Y.J., Hwang, J.M., Hsu, T.C., et al. (2006) Enhancing the Output Power of GaN-Based LEDs Grown on Wet-Etched Patterned Sapphire Substrates. Photonics Technology Letters, 18, 1152-1154.
[14] Lee, J.H., Oh, J.T., Choi, I.S., et al. (2007) Growth and Characteristics of In-GaN/GaN Films Grown on Hemispherical Patterned Sapphire by Using MOCVD. Journal of the Korean Physical Society, 51, S249-S252.
[15] Song, J.C., Lee, S.H., Lee, I.H., et al. (2007) Characteristics Comparison between GaN Epilayers Grown on Patterned and Unpatterned Sapphire Substrate (0 0 0 1). Journal of Crystal Growth, 308, 321-324.
[16] Jeonga, S.M., Kissinger, S., Kim, D.W., et al. (2010) Characteristic Enhancement of the Blue LED Chip by the Growth and Fabrication on Patterned Sapphire (0 0 0 1) Substrate. Journal of Crystal Growth, 312, 258-262.
[17] Wang, C.C., Ku, H., Liu, C.C., et al. (2007) Enhancement of the Light Output Performance for GaN-Based Light-Emitting Diodes by Bottom Pillar Structure. Applied Physics Letters, 91, 121109-121111.
[18] Gao, H.F., Zhang, Y.Y., Li, J., et al. (2008) Enhancement of the Light Output Power of InGaN/GaN Light-Emitting Diodes Grown on Pyrami-Dal Patterned Sapphire Substrates in the Micro- and Nanoscale. Journal of Applied Physics, 103, 014314-014318.
[19] Yu, S.F., Chang, S.P., Chang, S.J., et al. (2012) Characteristics of In-GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights. Journal of Nanomaterials, 10, 346915-346920.

comments powered by Disqus

Copyright © 2020 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.