Transport Properties of AgInSe₂ Crystals

Hamdy T. Shaban, Melaad K. Gergs

Physics Department, College of Science and Arts, Najran University, Najran, KSA; Physics Department, Faculty of Science, South Valley University, Qena, Egypt.
Physics Department, Faculty of Science, South Valley University, Qena, Egypt.

DOI: 10.4236/msa.2014.55035                

Abstract

AgInSe₂ crystals were grown by Bridgman technique. The crystals were identified structurally by X-ray diffraction technique. Measurements of electrical conductivity and Hall effect were performed in the temperature range (138 K - 434 K) and (220 K - 488 K) for thermoelectric power measurements. From these measurements, many physical parameters were determined. The energy gap was calculated to be 1.24 eV. The conductivity type was found to be n-type. Crystallite size (D) of the obtained AgInSe₂ crystals was calculated to be 70 nm. The lattice parameters for the prepared crystals were a = 6.0938 ? and c = 11.7775 ?.

Keywords

Semiconductors, Crystal Growth, X-Ray Diffraction, Transport Properties

Conflicts of Interest

The authors declare no conflicts of interest.

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