Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiO_x) Nanowires

Anima Johari, Anoopshi Johari, Vikas Rana, M. C. Bhatnagar

CARE, Physics Department, IIT Delhi, New Delhi, India.
THDC Institute of Hydropower Engineering and Technology, Tehri, India.

DOI: 10.4236/wjnse.2014.41001                

Abstract

In the present work, one-dimensional nanostructures of silicon oxide (SiO_x) have been synthesized by thermal annealing method with and without chromium thin film on silicon substrate. The synthesis was carried out at different process temperatures ranging from 1000°C to 1100°C by using gold/chromium (Au/Cr) catalysts stack layer on the Si substrate in nitrogen (N₂) ambience. The as-synthesized SiO_x nanostructures have tetragonal rutile structure and show polycrystalline nature. The SEM images reveal wire-like nanostructures on the substrate with and without chromium thin film. Under the catalytic reaction of the gold/chromium metal, the density of SiO_x nanowires is enhanced, since the Cr layer serves as a diffusion barrier for the diffusion of the gold downwards into the Si substrate. The vapor-liquid solid (VLS) growth mechanism is found to be dominant in the growth of SiO_x nanowires. Furthermore, X-Ray diffraction microscopy (XRD) and Photoluminescence spectroscopy (PL) analysis conclude the defect free growth of the SiO_x nanowires on gold/chrome/silicon substrate.

Keywords

SiO_x Nanowires; Catalyst Assisted Growth; Gold; Chromium; Thermal Annealing

Conflicts of Interest

The authors declare no conflicts of interest.

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