Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Noureddine Sfina, Naima Yahyaoui, Moncef Said, Jean-Louis Lazzari

Department of Physics, Faculty of Sciences of Monastir, Laboratory of Condensed Matter and Nanosciences (LMCN), Monastir, Tunisia.
Interdisciplinary Nanoscience Centre of Marseille (CINaM), Aix-Marseille University, Marseille, France.

DOI: 10.4236/mnsms.2014.41007                

Abstract

In this paper, a p-i-n heterojunction based on strain-compensated Si/Si_1-xGe_x/Si multiple quantum wells on relaxed Si_1-yGe_y is proposed for photodetection applications. The Si_1-yGe_y/Si/Si_1-xGe_x/Si/Si_1-yGe_y stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 - 1.55 μm. The electron transport in the Si/Si_1-xGe_x/Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrodinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (R_oA) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.

Keywords

Strained SiGe/Si Quantum Wells; Band Structure; Device Engineering; P-i-n Infrared Photodetectors

Conflicts of Interest

The authors declare no conflicts of interest.

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