Electronic Properties of Nanopore Edges of Ferromagnetic Graphene Nanomeshes at High Carrier Densities under Ionic-Liquid Gating

DOI: 10.4236/msa.2014.51001   PDF   HTML   XML   3,486 Downloads   3,486 Views   Citations


Graphene edges with a zigzag-type atomic structure can theoretically produce spontaneous spin polarization despite being a critical-metal-free material. We have demonstrated this in graphene nanomeshes (GNMs) with honeycomb-like arrays of low-defect hexagonal nanopores by observing room-temperature ferromagnetism and spin-based phenomena arising from the zigzag-pore edges. Here, we apply extremely high electric fields to the ferromagnetic (FM) GNMs using an ionic-liquid gate. A large on/off-ratio for hole current is observed for even small applied ionic-liquid gate voltages (Vig). Observations of the magnetoresistance behavior reveal high carrier densities of ~1013 cm-2 at large Vig values. We find a maximum conductance peak in the high -Vig region and its separation into two peaks upon applying a side-gate (in-plane external) voltage (Vex). It is discussed that localized edge-π band with excess-density electrons induced by Vig and its spin splitting for majority and minority of spins by Vex (half-metallicity model) lead to these phenomena. The results must realize critical-element-free novel spintronic devices.

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T. Hashimoto, S. Kamikawa, Y. Yagi and J. Haruyama, "Electronic Properties of Nanopore Edges of Ferromagnetic Graphene Nanomeshes at High Carrier Densities under Ionic-Liquid Gating," Materials Sciences and Applications, Vol. 5 No. 1, 2014, pp. 1-9. doi: 10.4236/msa.2014.51001.

Conflicts of Interest

The authors declare no conflicts of interest.


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