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Mixed-Mode Device Modeling of DGMOS RF Oscillators

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DOI: 10.4236/cs.2014.51004    3,256 Downloads   4,838 Views  
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Mourad Bella, Saida Latreche, Samir Labiod, Christian Gontrand

Affiliation(s)

Electronic Department of Engineering and Technology, University Constantine 1, Constantine, Algeria.
Institute of Nanotechnology of Lyon (INL), University of Lyon, Lyon, France.

ABSTRACT

A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations.

KEYWORDS

DGMOS Transistor; Colpitts Oscillator; Radiofrequency; Mixed Mode Simulation; ISF Function; Noise

Cite this paper

M. Bella, S. Latreche, S. Labiod and C. Gontrand, "Mixed-Mode Device Modeling of DGMOS RF Oscillators," Circuits and Systems, Vol. 5 No. 1, 2014, pp. 18-26. doi: 10.4236/cs.2014.51004.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] A. M. Niknejad and R. G. Meyer, “Fully-Integrated Low Phase Noise Bipolar Differential VCOs at 2.9 and 4.4 GHz,” Proceedings of 25th European Solid-State Circuits Conference, 21-23 September1999.
[2] A. Kyranas and Y. Papananos, “Passive On-Chip Components for Fully Integrated Silicon RF VCOs,” Active and Passive Electronic Components, Vol. 25, No. 1, 2002, pp. 83-95.
[3] M. Niansong, P. Yaohua, H. Yumei and H. Zhiliang, “A 8.75-11.2-GHz, Low Phase Noise Fractional-N Synthesizer for 802.11a/b/g Zero-IF Transceiver,” Journal of Semiconductors, Vol. 32, No. 6, 2011, Article ID: 065003.
[4] T. C. Weigandt, B. Kim and P. R. Gray, “Analysis of Timing Jitter in CMOS Ring Oscillators,” Proceedings of ISCAS, Vol. 4, 1994, pp. 27-30.
[5] B. Razavi, “A Study of Phase Noise in CMOS Oscillators,” IEEE Journal of Solid-State Circuits, Vol. 31, No. 3, 1996, pp. 331-343. http://dx.doi.org/10.1109/4.494195
[6] J. McNeil, “Jitter in Ring Oscillators,” Proceedings of ISCAS, Vol. 6, 1994, pp. 201-204.
[7] R. Navid, T. H. Lee and R. W. Dutton, “Minimum Achievable Phase Noise of RC Oscillators,” IEEE Journal of Solid-State Circuit, Vol. 40, No. 3, 2005, pp. 630-637.
http://dx.doi.org/10.1109/JSSC.2005.843591
[8] A. Demir, A. Mehrota and J. Roychowdhury, “Phase Noise in Oscillators: A Unified Theory and Numerical Method for Characterisation,” IEEE Circuit and System, Vol. 47, No. 5, 2000, pp. 655-674.
http://dx.doi.org/10.1109/81.847872
[9] L. S. Cutler and C. L. Searle, “Some Aspects of the Theory and Measurement of the Frequency Fluctuations in Frequency Standards,” Proceedings of IEEE, Vol. 54, No. 2, 1966, pp. 136-154.
http://dx.doi.org/10.1109/PROC.1966.4627
[10] A. Hajimiri and T. Lee, “A General Theory of Phase Noise in Electrical Oscillators,” IEEE Journal of SolidState Circuits, Vol. 33, No. 2, 1998, pp. 179-194.
http://dx.doi.org/10.1109/4.658619
[11] A. Hajimiri and T. Lee, “Oscillator Phase Noise: A Tutorial,” IEEE Journal of SolidState Circuits, Vol. 35, No. 3, 2000, pp. 326-336.
http://dx.doi.org/10.1109/4.826814
[12] D. B. Leeson, “A Simple Model of Feedback Oscillator Noises Spectrum,” Proceedings of IEEE, Vol. 54, No. 2, 1966, pp. 329-330.
http://dx.doi.org/10.1109/PROC.1966.4682
[13] A. Hajimiri and T. Lee, “Design Issues in CMOS Differential LC Oscillators,” IEEE Journal of Solid-State Circuit, Vol. 34, No. 5, 1999, pp. 716-724.
http://dx.doi.org/10.1109/4.760384
[14] A. Hajimiri, S. Limotyrakis and T. Lee, “Jitter and Phase Noise in Ring Oscillators,” IEEE Journal of Solid-State Circuit, Vol. 34, No. 6, 1999, pp. 790-804.
http://dx.doi.org/10.1109/4.766813
[15] ISE-TCAD Manuals, Release 8.0, Integrated Systems Engineering, 2002.
[16] J.-P. Colinge, “The New Generation of SOI MOSFETs,” Romaniam Journal Information Science and Technology, Vol. 11, No. 1, 2008, pp. 3-15.
[17] M. Bescond, J. L. Autran, D. Munteanu and M. Lannoo, “Atomic-Scale Modeling of Double Gate MOSFETs Using a Tight-Binding Greens Function Formalism,” SolidState Electronics, Vol. 48, 2004, pp. 567-574.
http://dx.doi.org/10.1016/j.sse.2003.09.025
[18] M. Videivic-Misic and M. Jevtic, “DC Condition and Phase Noise of Colpitts Oscillator with DGMOS,” Proceedings of 24th International Conference on Microelectronics (MIEL 2004), Vol. 2, NIS, Serpia and Montenegro, 16-19 May 2004.
[19] K. O. Kenneth, N. Park and D.-J. Yang, “1/f Noise of NMOS and PMOS Transistor and Their Implications to Design of Voltage Controlled Oscillators,” IEEE RFIC Symp. Dig, June 2002, pp. 59-62.

  
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