[1]
|
C. D. Presti, F. Carrara, A. Scuderi, P. M. Asbeck and G. Palmisano, “A 25 dBm Digitally Modulated CMOS Power Amplifier for WCDMA/EDGE/OFDM With Adaptive Digital Predistortion and Efficient Power Control,” IEEE Journal of Solid-State Circuits, Vol. 44, No. 7, 2009, pp. 1883-1896. http://dx.doi.org/10.1109/JSSC.2009.2020226
|
[2]
|
N. O. Sokal, “Class-E RF Power Amplifiers,” QEX, No. 204, 2001, pp. 9-20.
|
[3]
|
F. H. Raab, P. Asbeck, S. Cripps, P. B. Kenington, Z. B. Popovich, N. Pethecary, J. F. Sevic and N. O. Sokal, “RF and Microwave Power Amplifier and Transmitter Technologies—Part 2,” High Frequency Electronics, 2003, pp. 39-48.
|
[4]
|
P. Wagh and P. Midya, “High-Efficiency Switched-Mode RF Power Amplifier,” Proceedings of Midwest Symposium on Circuits and Systems, Vol. 2, 1999, pp. 10441047.
|
[5]
|
P. Reynaert and M. Steyaert, “A 1.75-GHz Polar Modulated CMOS RF Power Amplifier for GSM-EDGE,” IEEE Journal of Solid-State Circuits, Vol. 40, No. 12, 2005, pp. 2598-2608. http://dx.doi.org/10.1109/JSSC.2005.857425
|
[6]
|
Ch. Park, Y. Kim, H. Kim and S. Hong, “A 1.9-GHz CMOS Power Amplifier Using Three-Port Asymmetric Transmission Line Transformer for a Polar Transmitter,” IEEE Transactions on Microwave Theory and Techniques, Vol. 55, No. 2, 2007, pp. 230-238. http://dx.doi.org/10.1109/TMTT.2006.889152
|
[7]
|
C. Yoo and Q. Huang, “A Common-Gate Switched 0.9-W Class-E Power Amplifier with 41% PAE in 0.25-_m CMOS,” IEEE Journal of Solid-State Circuits, Vol. 36, No. 5, 2001, pp. 823-830. http://dx.doi.org/10.1109/4.918921
|
[8]
|
T. Sowlati and D. M. W. Leenaerts, “A 2.4 GHz 0.18-_m CMOS Selfbiased Cascode Power Amplifier,” IEEE Journal of Solid-State Circuits, Vol. 38, No. 8, 2003, pp. 1318-1324. http://dx.doi.org/10.1109/JSSC.2003.814417
|
[9]
|
D. Sira, P. Thomsen and T. Larsen, “Output Power Control in Class-E Power Amplifiers,” IEEE Microwave and Wireless Components Letters, Vol. 20, No. 4, 2010. http://dx.doi.org/10.1109/LMWC.2010.2042562
|
[10]
|
T. W. Kwak, M. C. Lee and G. H. Cho, “A 2 W CMOS Hybrid Switching Amplitude Modulator for EDGE Polar Transmitters,” IEEE International Solid-State Circuits Conference, San Francisco, 11-15 February 2007, pp 518619.
|
[11]
|
J. N. Kitchen, I. Deligoz, S. Kiaei and B. Bakkaloglu, “Polar SiGe Class E and F Amplifiers Using Switch-Mode Supply Modulation,” IEEE Transactions on Microwave Theory and Techniques, Vol. 55, No. 5, 2007, pp. 845-856. http://dx.doi.org/10.1109/TMTT.2007.895407
|
[12]
|
A. Shameli, A. Safarian, A. Rofougaran, M. Rofougaran and F. De Flaviis, “A Two-Point Modulation Technique for CMOS Power Amplifier in Polar Transmitter Architecture,” IEEE Transactions on Microwave Theory and Techniques, Vol. 56, No. 1, 2008, pp. 31-38. http://dx.doi.org/10.1109/TMTT.2007.912012
|
[13]
|
A. Shirvani, D. Su and B. Wooley, “A CMOS RF Power Amplifier with Parallel Amplification for Efficient Power Control,” IEEE Journal of Solid-State Circuits, Vol. 37, No. 6, 2002, pp. 684-693. http://dx.doi.org/10.1109/JSSC.2002.1004572
|
[14]
|
T. L. Yang, J. R. Liang, C. Zhao and D. Y. Chen, “Analysis and Design of Class-E Power Amplifiers at Any Duty Ratio in Frequency Domain”, Analog Integrated Circuits and Signal Processing, Vol. 67, No. 2, 2011, pp. 149-156.
|