Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes

Ayşe Evrim Saatci, Orhan Özdemir, Kubilay Kutlu

Department of Physics, Yildiz Technical University, Istanbul, Turkey.

DOI: 10.4236/msa.2013.412101                

Abstract

Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO₂) in the form of MOS (metal(Al)/SiO₂/p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).

Keywords

Excess Capacitance; MOS; Selfly Inverted Region; Tunneling Based Inversion Currents

Conflicts of Interest

The authors declare no conflicts of interest.

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