The Conductivity of Indium Phosphide Irradiated by Fast Electrons

Sh. Sh. Rashidova

doi:10.4236/jmp.2013.411183

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The Conductivity of Indium Phosphide Irradiated by Fast Electrons ()

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DOI: 10.4236/jmp.2013.411183 2,837 Downloads 3,858 Views

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Sh. Sh. Rashidova

Affiliation(s)

Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.

ABSTRACT

In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 10¹⁷ el/cm² (centimeter) and 2 × 10¹⁷ el/cm² (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.

KEYWORDS

Antistructural Defects; Activation Energy; Indium Phosphide; Radiothermoluminescence Method

Cite this paper

S. Rashidova, "The Conductivity of Indium Phosphide Irradiated by Fast Electrons," Journal of Modern Physics, Vol. 4 No. 11, 2013, pp. 1508-1510. doi: 10.4236/jmp.2013.411183.

Conflicts of Interest

The authors declare no conflicts of interest.

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