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Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

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DOI: 10.4236/epe.2013.54B243    2,626 Downloads   3,386 Views  

ABSTRACT

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.

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G. Chen, S. Bai, Y. Tao and Y. Li, "Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET," Energy and Power Engineering, Vol. 5 No. 4B, 2013, pp. 1284-1287. doi: 10.4236/epe.2013.54B243.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] M. S. Mazzola, L. Cheng, J. R. B. Casady, D. Seale, V. Bondarenko, R. Kelley and J. B. Casady, presented in The 6th International All Electric Combat Vehicle (AECV) Conference 2005, Bath, England, June 15, 2005,
[2] K. Rueschenschmidt, T. M. reu, R. Rupp, et al., “SiC JFET: Currently the Best Solution for a Unipolar SiC High Power Switch,” Material Science Forum, Vol. 600-603, 2009, pp. 901-906. doi:10.4028/www.scientific.net/MSF.600-603.901
[3] W. J. Ni, Y. Z. Li, Z. Y. Li, et al., “1200 V Normally-on 4H-SiC VJFET,” Research & Progress of Sse, Vol. 31, No. 2, 2011, pp. 103-106.
[4] G. Chen, X. F. Song, S. Bai, et al., “5A 1300V Trenched and Implanted 4H-SiC Vertical JFET,” Applied Mechanics and Materials, Vol. 229-231, 2012, pp. 824-827.doi:10.4028/www.scientific.net/AMM.229-231.824
[5] V. Veliadis, M. Snook, T. McNutt, H. Hearne, P. Potyraj, A. Lelis and C. Scozzie, “A 2055-V (at 0.7 mA/cm2) 24-A (at 706 W/cm2) Normally On 4H-SiC JFET With 6.8-mm2 Active Area and locking-Voltage Capability Reaching the Material Limit,” IEEE Electronics Device Letters, Vol. 29, No. 12, 2008, pp. 1325-1327.
[6] C. S. David and R. Andrew, “Semiconductor Devices with Non-punch-through Semiconductor Channels Having Enhanced Conduction and Methods of Making,” Patent No. US7994548 B2.

  
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