High Voltage Stress Impact on P Type Crystalline Silicon PV Module

DOI: 10.4236/epe.2013.57049   PDF   HTML     3,570 Downloads   5,466 Views   Citations


The effects of the high voltage stress and other environmental conditions on crystalline silicon photovoltaic module performance have not been included in the IEC 61215 or other qualification standards. In this work, we are to evaluate the potential induced degradation on p type crystalline silicon PV modules by three cases, one case is in room temperature, 100% relative humidity water bath, another is in room temperature, the front sheet coverage with aluminum foil and the other is in the 85°C, 85% relative humidity climate chamber. All the samples are applied with the -1000 V bias to active layers, respectively. Our current-voltage measurements and electroluminescence results showed in these modules power loss of 37.74%, 11.29% and 49.62%, respectively. These test results have shown that among high voltage effects the climate chamber is the harshest and fastest test. In this article we also showed that the ethylene vinyl acetate volume resistivity and soda-lime glass ingredients are important factors to PID failure. The high volume resistivity which is more than 1014 Ω·cm and Na less contents glass will mitigate the PID effect to ensure PID free.

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H. Liu, C. Huang, W. Lee and M. Lin, "High Voltage Stress Impact on P Type Crystalline Silicon PV Module," Energy and Power Engineering, Vol. 5 No. 7, 2013, pp. 455-458. doi: 10.4236/epe.2013.57049.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] R. Swanson, et al., “The Surface Polarization Effect in High-Efficiency Silicon Solar Cells,” Proceedings of the 15th International Photovoltaic Science & Engineering Conference, Shanghai, 11-13 October 2005, pp. 410-413.
[2] J. A. del Cueto, “Degradation of Photovoltaic Modules under High Voltage Stress in the Field,” Proceedings of SPIE, Vol. 7773, 2010.
[3] IEC 61215, “Crystalline Silicon Terrestrial Photovoltaic Modules—Design Qualification and Type Approval,” International Electrotechnical Commission, Geneva, 2005.
[4] D. E. Carlson, et al., “Corrosion Effects in Thin-Film Photovoltaic Modules,” Progress in Photovoltaics: Re search and Applications, Vol. 11, No. 6, 2003, pp. 377-386. doi:10.1002/pip.500
[5] P. Hacke, et al., “Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat,” Proceedings of the 25th European Photo voltaic Solar Energy Conference and Exhibition, Valen cia, 6-10 September 2010, pp. 3760-3765.
[6] P. Hacke, et al., “System Voltage Potential-Induced Degradation Mechanisms in PV Modules and Methods for Test,” Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Seattle, 19-24 June 2011, pp. 000814-000820.
[7] M. Schütze, et al., “Investigations of Potential Induced Degradation of Silicon Photovoltaic Modules,” Proceed ings of the 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, 5-8 September 2011, pp. 3097-3102
[8] H. C. Liu, C. T. Huang and W. K. Lee, “Study of Poten tial Induced Degradation Mechanism in Commercial PV Module,” 38th IEEE PVSC, Austin, 2012, pp. 002442-002444.
[9] H. Nagel, A. Metz and K. Wangemann, “Crystalline Si Solar Cells And Modules Featuring Excellent Stability Against Potential-Induced Degradation,” Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, 5-8 September 2011, pp. 3107-3112.
[10] S. Koch, et al., “Potential Induced Degradation Effects and Tests for Crystalline Silicon Cells,” Photovoltaic Module Reliability Workshop, Golden, 28 February-1 March 2012.
[11] IEC 2007, “Photovoltaic Devices-Solar Simulator Performance Requirements,” IEC 60904-9 ed. 2, 2007.
[12] ASTM-D257, “Standard Test Methods for DC Resistance or Conductance of Insulating Materials,” 2012.

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