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Temporal Evolution of Anodization Current of Porous Silicon Samples

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DOI: 10.4236/msa.2013.48A005    4,123 Downloads   5,461 Views  

ABSTRACT

Temporal evolution of the anodization current of porous silicon samples was studied by means of a model of resistances connected in series that represented the temporal changes of the substrate and of the interface between the substrate and the electrolyte during the porous sample formation process. The porous samples were obtained by means of photoelectrochemical etching of (100) n-type silicon wafers with different resistivity values, all in the range of 1 - 25 Wcm. The samples were formed at room temperature in an electrolytic bath composed by a mixture of hydrofluoric acid (48%) and ethanol having a composition ratio of 1:1 in volume under potentiostatic condition (10 V and 20 V) and an etching time of 2 minutes using back illumination provided by a laser beam with a wavelength of 808 nm.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

A. Gutiérrez, J. Giraldo and M. Rodríguez-García, "Temporal Evolution of Anodization Current of Porous Silicon Samples," Materials Sciences and Applications, Vol. 4 No. 8A, 2013, pp. 43-47. doi: 10.4236/msa.2013.48A005.

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