Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si


Self-organization processes in semiconductor materials on the example of nanostructuring of por-Si at long anodic etching of p-type Si in the electrolyte with internal source of the current are shown. In conditions of a “soft” etching of the Si point defects are formed and in the subsequently occurs their spatial-temporal ordering. This leads to the ordering pores and the nanostructuring of por-Si. Self-organization mechanism of Si nanocrystallites islets is described by the effects of the elastically-deformative, defectively-deformative and capillary-fluctuation forces.

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K. Tynyshtykbaev, T. Aitmukan, A. Issova, B. Rakhymetov, M. Yeleuov and S. Tokmoldin, "Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si," Materials Sciences and Applications, Vol. 4 No. 8A, 2013, pp. 1-11. doi: 10.4236/msa.2013.48A001.

Conflicts of Interest

The authors declare no conflicts of interest.


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