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Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes

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DOI: 10.4236/opj.2013.32B067    3,314 Downloads   4,235 Views  

ABSTRACT

High efficiency 650 nm resonant cavity light emitting diodes (RCLEDs) with a cladding layer cavity are reported. The epitaxial structure is grown with a metal-organic chemical vapor deposition (MOCVD) system. Al 0.5Ga 0.5 As/Al As is used for the distributed Bragg reflectors (DBRs), and GaInP/AlGaInP multiple-quantum wells for the active region. Two RCLED samples have been fabricated, one with a cladding layer cavity and the other without. Experimental results show that the cladding layer cavity can improve the internal quantum efficiency effectively, so that an external quantum efficiency of 7.4% at 20 mA is reached. Meanwhile, the sample with cladding layer cavity also shows a spectral stability as the injected current changing from 20 mA to 100 mA.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

J. Li, T. Liu, J. Li and X. Ya, "Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes," Optics and Photonics Journal, Vol. 3 No. 2B, 2013, pp. 284-287. doi: 10.4236/opj.2013.32B067.

References

[1] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal and M. G. Craford, “High Performance AlGalnP Visible Light-Emitting Diodes,” Applied Physics Letters. Vol. 57, No. 27, 1990, 2937. doi:10.1063/1.103736
[2] E. F. Schubert, Y. H. Wang, A. Y. Cho, L. W. Tu and G. J. Zydzik, “Resonant Cavity Light-Emitting Diode,” Applied Physics Letters, 1992, Vol. 60, No. 8, 106489. doi:10.1063/1.106489
[3] Y. A. Chang, C. L. Yu, I. T. Wu, H. C. Kuo, T. C. Lu, F. I. Lai, L. W. Laih, L. H. Laih and S. C. Wang, “Design and Fabrication of Temperature-Insensitive InGaP-InGaAIP Resonant-Cavity Light-Emitting Diodes,” 2006 IEEE Photonics Technology Letters, Vol. 18, No. 16, 1690. doi:10.1109/LPT.2006.879931
[4] J. R. Chen, T. S. Ko, T. C. Lu, Y. A. Chang, H. C. Kuo, Y. K. Kuo, J. Y. Tsai, L. W. Laih and S. C. Wang, “Fabrication and Characterization of Temperature Insensitive 660 nm Resonant-Cavity LEDs,” IEEE Journal of LightWave Technology, Vol. 26, No. 13, 2008, 1891. doi:10.1109/JLT.2008.920639
[5] H. Fardi, M. Jan, B. Van Zeghbroeck, 2012, Photovoltaic Specialists Conference. 16 785
[6] E. F. Schubert, N. E. J. Hunt, R. J. Malik, M. Micovic and D. L. Miller, “Temperature and Modulation Characteristics of Resonant-Cavity Light-Emitting Diodes,” IEEE Journal of Lightwave Technology, Vol. 14, No. 7, 1721. doi.org/10.1109/50.507950
[7] R. Joray, M. Ilegems, R. P. Stanley, W. Schmid, R. Butendeich, R. Wirth, A. Jaeger and K. Streubel, “Far-Fields Radiation Pattern of Red Emitting Thin-Film Resonant Cavity LEDs,” IEEE Photonics Technology Letters, Vol. 18, No. 9, 2006, 1052. doi.org/10.1109/LPT.2006.873553
[8] S. Morikura and Y. Okamura. “Angle-Dependent Spectral Width of Resonant-Cavity Light-Emitting Diode,” IEEE Photonics Technology Letters, Vol. 21, No. 10, 2009, 21 660. doi.org/10.1109/LPT.2009.2016218
[9] S. W. Chiou, Y. C. Lee, Y. C. Yang, C. S. Chang and T. P. Chen, “High-Performance Resonant Cavity Light-Emitting Diode for Plastic Optical Fiber Application,” Proceeding of SPIE, Vol. 5366, 2004. doi.org/10.1117/12.525285
[10] M. M. Dumitrescu, M. J. Saarinen, M. D. Guina and M. V. Pessa, “High-Speed Resonant Cavity Light-Emitting Diodes at 650 nm,” IEEE Journal on Selected Topics in Quantum Electronics, Vol. 8, No. 2, 2002, pp. 219-230. doi:10.1109/2944.999174
[11] J. J. Li, Z. Yang, J. Han, J. Deng, D. S. Zou, Y. Z. Kang, L. Ding and G. D. Shen. Acta Physica Sinica. 2009, 58 6304.
[12] R. Wirth, C. Karnutsch, S. Kugler, S. Thaler and K. Streubel. “Red and Orange Resonant-Cavity LEDs,” Proceedings of SPIE, Vol. 4278, 2001. doi:10.1117/12.426855
[13] P. H. Lei and C. D. Yang. Solid-State Electronics, 2008, 52 227.
[14] K. Berggenek, C. Wiesmann, H. Zull, R. Wirth, P. Sundgren, N. Linder, K. Streubel, and T. F. Krauss. “Directional Light Extraction from Thin-Film Resonant Cavity Light-Emitting Diodes With a Photonic Crystal,” Applied Physics Letters, Vol. 93, No. 23, 2008, 231109. doi:10.1063/1.3046130
[15] J. Rao, R. Winfield and S.O’ Brien. IEEE Photonics Technology Letters. 2009, “Enhancement of Light Extraction From Resonant Cavity Light-Emitting Diodes Using a 2-D Grating Embossed in TiO2 Sol-Gel,” Vol. 21, No. 13, 941. doi:10.1109/LPT.2009.2020808
[16] J. J. Li and G.D. Shen. Journal of Optoelectronics. Laser. 2006, 17 1457.
[17] H. Benisty, H. D. Neve and C. Weisbuch. “Imoact of Planar Microcavity Effects on Light Extraction-PartⅠ:Basic concepts and Analytical Trends,” IEEE Journal Quantum Electron, Vol. 34, No. 9,1998, pp. 1612-1631. doi.org/10.1109/3.709578
[18] S. Gehrsitz, F. K. Reinhart, C. Gourgon, N. Herres, A. Vonlanthen and H. Sigg, “The Refractive Index of AlxGa1-xAs Below the Band Gap: Accurate Determination and Empircal Modeling,” Journal of Applied Physics, 2000, Vol. 87. 7825.doi:10.1063/1.373462

  
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