Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes


High efficiency 650 nm resonant cavity light emitting diodes (RCLEDs) with a cladding layer cavity are reported. The epitaxial structure is grown with a metal-organic chemical vapor deposition (MOCVD) system. Al 0.5Ga 0.5 As/Al As is used for the distributed Bragg reflectors (DBRs), and GaInP/AlGaInP multiple-quantum wells for the active region. Two RCLED samples have been fabricated, one with a cladding layer cavity and the other without. Experimental results show that the cladding layer cavity can improve the internal quantum efficiency effectively, so that an external quantum efficiency of 7.4% at 20 mA is reached. Meanwhile, the sample with cladding layer cavity also shows a spectral stability as the injected current changing from 20 mA to 100 mA.

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J. Li, T. Liu, J. Li and X. Ya, "Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes," Optics and Photonics Journal, Vol. 3 No. 2B, 2013, pp. 284-287. doi: 10.4236/opj.2013.32B067.

Conflicts of Interest

The authors declare no conflicts of interest.


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