Infrared Transmission in Porous Silicon Multilayers


Porous silicon is a nanostructured material and exhibits efficient photo- and electro-luminescence in the visible range at room temperature, as well as a tunable refractive index determined by its porosity. Porous silicon samples can be obtained by etching a crystalline silicon wafer in a solution of hydrofluoric acid. In this work, we report the fabrication of porous silicon multilayers alternating layers with high and low porosities, which correspondingly produce low and high refractive indices. The free-standing multilayers were formed following three different sequences: periodic, Fibonacci and ThueMorse. These structures were verified by scanning electron microscopy and their infrared transmission spectra were measured by means of Fourier-transform infrared spectroscopy. On the other hand, we calculate the light transmittance of porous silicon multilayers by using the transfer matrix method for all directions of incidence and a wide range of wavelengths. The experimental measurements are compared with theoretical results and a good agreement is observed. In addition, an analysis of infrared absorption peaks due to the molecular vibrations at pore surfaces reveals the presence of hydrogen and oxygen atoms.

Share and Cite:

A. Palavicini and C. Wang, "Infrared Transmission in Porous Silicon Multilayers," Optics and Photonics Journal, Vol. 3 No. 2A, 2013, pp. 20-25. doi: 10.4236/opj.2013.32A003.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] L. T. Canham, “Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers,” Applied Physics Letters, Vol. 57, No. 10, 1990, pp. 1046-1048. doi:10.1063/1.103561
[2] P. Alfaro, R. Cisneros, M. Bizarro, M. Cruz-Irisson and C. Wang, “Raman Scattering by Confined Optical Phonons in Si and Ge Nanostructures,” Nanoscale, Vol. 3, 2011, pp. 1246-1251. doi:10.1039/c0nr00623h
[3] R. Cisneros, H. Pfeiffer and C. Wang, “Oxygen Absorption in Free-Standing Porous Silicon: A Structural, Optical and Kinetic Analysis,” Nanoscale Research Letters, Vol. 5, No. 4, 2010, pp. 686-691. doi:10.1007/s11671-010-9532-2
[4] J. Volk, J. Balázs, A.L. Tóth and I. Bársony, “Porous Silicon Multilayers for Sensing by Tuneable IR-Trans mission Filtering,” Sensors and Actuators B, Vol. 100, No. 1-2, 2004, pp. 163-167. doi:10.1016/j.snb.2003.12.042
[5] P. Pirasteh, J. Charrier, Y. Dumeige, P. Joubert, S. Haesaert and L. Haji, “Further Results on Porous Silicon Optical Waveguides at 1.55 μm,” Physica Status Solidi A, Vol. 204, No. 5, 2007, pp. 1346-1350. doi:10.1002/pssa.200674333
[6] M. Ghulinyan, C. J. Oton, G. Bonetti, Z. Gaburro and L. Pavesi, “Free-Standing Porous Silicon Single and Multiple Optical Cavities,” Journal of Applied Physics, Vol. 93, No. 12, 2003, pp. 9724-9729. doi:10.1063/1.1578170
[7] A. Bruyant, G. Lérondel, P. J. Reece and M. Gal, “All Silicon Omnidirectional Mirrors Based on One-Dimensional Photonic Crystals,” Applied Physics Letters, Vol. 82, No. 19, 2003, pp. 3227-3229. doi:10.1063/1.1574403
[8] L. Moretti, I. Rea, L. De Stefano and I. Rendina, “Periodic versus Aperiodic: Enhancing the Sensitivity of Porous Silicon Based Optical Sensors,” Applied Physics Letters, Vol. 90, 2007, Article ID: 191112.
[9] M. Kohmoto, B. Sutherland and K. Iguchi, “Localization in Optics: Quasiperiodic Media,” Physical Review Letters, Vol. 58, No. 23, 1987, pp. 2436-2438. doi:10.1103/PhysRevLett.58.2436
[10] V. Kumar, B. Suthar, A. Kumar, V. Kumar, K. S. Singh, A. Bhargva and S. P. Ojha, “Wave Transmission in Dispersive Si-Based One Dimensional Photonic Crystal,” Optics and Photonics Journal, Vol. 2, No. 3A, 2012, pp. 237-241. doi:10.4236/opj.2012.223036
[11] E. Maciá, “Aperiodic Structures in Condensed Matter: Fundamentals and Applications,” CRC Press, Boca Raton, 2009, pp. 132-134.
[12] C. Janot, “Quasicrystals, a Primer,” 2nd Edition, Oxford University Press, New York, 1994, pp. 24-27.
[13] J. M. Luck, C. Godreche, A. Janner and T. Janssen, “The Nature of the Atomic Surfaces of Quasiperiodic Self Similar Structures,” Journal of Physics A: Mathematical and General, Vol. 26, No. 8, 1993, pp. 1951-1999. doi:10.1088/0305-4470/26/8/020
[14] W. Steurer, “Crytallography of Quasicrystals,” Springer, Berlin, 2009, pp. 233-234.
[15] R. Cisneros, C. Ramírez and C. Wang, “Ellipsometry and ab Initio Approaches to the Refractive Index of Porous Silicon,” Journal of Physics: Condensed Matter, Vol. 19, 2007, Article ID: 395010.
[16] V. Lehmann, “Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications,” Wiley-VCH, Berlin, 2002, p. 11. doi:10.1002/3527600272
[17] V. P. Tolstoy, I. V. Chernyshova and V. A. Skryshevsky, “Handbook of Infrared Spectroscopy of Ultrathin Films,” John Wiley and Sons, Hoboken, 2003, p. 452. doi:10.1002/047123432X
[18] J. Escorcia-García, L. M. Gaggero-Sager, A. G. Palestino-Escobedo and V. Agarwal, “Optical Properties of Cantor Nanostructures Made from Porous Silicon: A Sensing Application,” Photonics and Nanostructure—Fundamentals and Applications, Vol. 10, 2012, pp. 452- 458.

Copyright © 2023 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.