Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)
V. R. Chinchamalatpure, S. A. Ghosh, G. N. Chaudhari
DOI: 10.4236/msa.2010.14029   PDF    HTML     7,398 Downloads   14,325 Views   Citations


BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.

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V. Chinchamalatpure, S. Ghosh and G. Chaudhari, "Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)," Materials Sciences and Applications, Vol. 1 No. 4, 2010, pp. 187-190. doi: 10.4236/msa.2010.14029.

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The authors declare no conflicts of interest.


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