Space Environment Simulator for Testing of Materials and Devices


Equipment has been designed and created for experimental simulation of space environment conditions of Geostationary orbit of the Earth. The following conditions are supported in the vacuum chamber having volume of 1.2 cubic meters: Vacuum 10-5 Torr. (1.3 × 10-3 Pa), electron beam with energy up to 8 MeV, temperatures from -150°C to +150°C and solar ultraviolet radiation. The peculiarity of this equipment is the possibility of analyzing complex simultaneous influence of mentioned above 4 factors on the sample and in-situ direct measurement of sample parameters under irradiation which provides almost real conditions. Silicon single crystals used in space environment were tested in the vacuum chamber and new results were received having scientific and applied interest. It was shown, particularly, that the electro-conductivity of silicon samples has higher value at in-situ condition than ex-situ after irradiation.

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H. Yeritsyan, V. Harutunyan, A. Sahakyan, S. Nikoghosyan, A. Hovhannisyan, N. Grigoryan, K. Ohanyan, E. Hakhverdyan, N. Hakopyan and V. Sahakyan, "Space Environment Simulator for Testing of Materials and Devices," Journal of Modern Physics, Vol. 4 No. 2, 2013, pp. 180-184. doi: 10.4236/jmp.2013.42025.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] S. Duzellier, “Radiation Effects on Electronic Devices in Space,” Aerospace Science and Technology, Vol. 9, No. 1, 2005, pp. 93-99. doi:10.1016/j.ast.2004.08.006
[2] A. I. Akishin, “Kosmicheskoe Materialovedenie (Space Material Science),” Moscow State University Publication, Moscow, 2007.
[3] C. Leroy and P.-G. Rancoita, “Particle Interaction and Displacement Damage in Silicon Devices Operated in Radiation Environments,” Reports on Progress in Physics, Vol. 70, No. 4, 2007, pp. 493-625. doi:10.1088/0034-4885/70/4/R01
[4] V. B. Molodkin, S. I. Olikhovskii, E. G. Len1, B. V. Sheludchenko1, et al., “X-Ray Diffraction Characterization of Microdefects in Silicon Crystals after High Energy Electron Irradiation,” Physica Status Solidi (A), Vol. 208, No. 11, 2011, pp. 2552-2557. doi:10.1002/pssa.201184253
[5] V. V. Emtsev, A. M. Ivanov, V. V. Kozlovski, A. A. Lebedev, G. A. Oganesyan, N. B. Strokan and G. Wagner, “Similarities and Distinctions of Defect Production by Fast Electron and Proton Irradiation: Moderately Doped Silicon and Silicon Carbide of n-Type,” Fizika i Tekhnika Poluprovodnikov, Vol. 46, No. 4, 2012, pp. 473-481.
[6] B. N. Mukashev, K. A. Abdullin and Y. V. Gorelkinski, “Metastable and Bistable Defects Isilicon,” Uspekhi Fizicheskikh Nauk, Vol. 170, No. 2, 2000, pp. 143-154. doi:10.3367/UFNr.0170.200002b.0143
[7] S. Makhkamov, N. A. Tursunov, M. Ashurov, R. P. Saidov and Z. M. Khakimov, “Formation of Radiation Defects in Silicon Structures under Low Intensity Electron Irradiation,” Semiconductor Science and Technology, Vol. 16, No. 7, 2001, pp. 543-547. doi:10.1088/0268-1242/16/7/303
[8] V. S. Vavilov, “Atomic Migration and Defect Concentration and Structure Changes Due to Electronic Subsystem Excitations in a Semiconductor,” Uspekhi Fizicheskikh Nauk, Vol. 167, No. 4, 1997, pp. 407-412. doi:10.3367/UFNr.0167.199704c.0407
[9] G.-F. Chen, W.-B. Yan, H.-J. Chen, H.-Y. Cui and Y.-X. Li, “Infrared Studies of Oxygen Related Complexes in Electron-Irradiated Cz-Si,” Chinese Physics B, Vol. 18, No. 7, 2009, p. 2988. doi:10.1088/1674-1056/18/7/061
[10] K. D. Shcherbachev, V. T. Bublik, V. N. Mordkovich and D. M. Pazhin, “The Effect of in Situ Photoexcitation on the Generation of Damaged Structures during Ion Implantation into Si Wafers,” Journal of Physics D: Applied Physics, Vol. 38, No. 10A, 2005, pp. A126-A131. doi:10.1088/0022-3727/38/10A/024
[11] P. C. Srivastava, O. P. Sinha, J. K. Tripathi and D. Kabi- raj, “In Situ I-V Study of Swift (~100 MeV) O6+ Ion-Ir-radiated Pd/n-Si Devices,” Semiconductor Science and Technology, Vol. 17, No. 9, 2002, pp. L44-L46. doi:10.1088/0268-1242/17/9/102

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