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The Growth of Single Crystals of InGaSe2 Compounds, Their X-Ray-Phase Analysis, Electronic Structure and Optical Functions

DOI: 10.4236/ojinm.2013.31001    2,644 Downloads   5,899 Views   Citations

ABSTRACT


Growing of InGaSe2 single crystals has been carried out by employing the Brijman-Stockbargor methods. On the base of X-ray-analysis it has been found that the given phase is crystallized into tetragonal symmetry. The temperature dependence of electric conductivity has been studied. Band structure has been computed. Optical functions, effective masses of electrons and holes have been calculated. Origin of formation of valence and conductance bands as well as the width of forbidden band for InGaSe2 have been determined.


Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

E. Gojaev, Z. Jahangirli, P. Alieva, K. Khalilova and T. Musaev, "The Growth of Single Crystals of InGaSe2 Compounds, Their X-Ray-Phase Analysis, Electronic Structure and Optical Functions," Open Journal of Inorganic Non-metallic Materials, Vol. 3 No. 1, 2013, pp. 1-5. doi: 10.4236/ojinm.2013.31001.

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