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Efficient Time-Domain Signal and Noise FET Models for Millimetre-Wave Applications

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DOI: 10.4236/jemaa.2013.51005    4,404 Downloads   5,971 Views   Citations

ABSTRACT

Based on the active coupled line concept, a novel approach for efficient signal and noise modeling of millimeter-wave field-effect transistors is proposed. The distributed model considers the effect of wave propagation along the device electrodes, which can significantly affect the device performance especially in the millimetre-wave range. By solving the multi-conductor transmission line equations using the Finite-Difference Time-Domain technique, the proposed procedure can accurately determine the signal and noise performance of the transistor. In order to demonstrate the proposed FET model accuracy, a distributed low-noise amplifier was designed and tested. A model selection is often a trade-off between procedure complexity and response accuracy. Using the proposed distributed model versus the circuit-based model will allow increasing the model frequency range.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

S. Asadi and M. Yagoub, "Efficient Time-Domain Signal and Noise FET Models for Millimetre-Wave Applications," Journal of Electromagnetic Analysis and Applications, Vol. 5 No. 1, 2013, pp. 23-31. doi: 10.4236/jemaa.2013.51005.

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