First Principle Study on the Electric Structure of β-FeSi2 with Native Point Defects

L.P. Peng; A.L. He

doi:10.4236/mnsms.2013.31B004

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First Principle Study on the Electric Structure of β-FeSi₂ with Native Point Defects ()

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DOI: 10.4236/mnsms.2013.31B004 2,422 Downloads 3,988 Views Citations

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L.P. Peng, A.L. He

Affiliation(s)

1Science and Technology on Plasma Physics Laboratory, Reasch Center of Laser Fusion, CAEP, P.O.Box 919-987,Mianyang 621900, PR China.
Science and Tichnology Information Center, CAEP, P.O.Box 919-983,Mianyang 621900, PR China.

ABSTRACT

The projector-augmented plane wave potentials method under the density functional theory (DFT ) was used to calcu-late the electronic structure of perfect and native point defective β-FeSi2 crystal. The calculated band structure shows that the band gap of perfect crystal is about 0.74eV, which is a little smaller than the experimental of about 0.9eV. The density of states results predicts that β-FeSi2 with Fe vacancies behaves n-type, and that with Si vacancies will shows p-type, which is in accordant with the experimental results.

KEYWORDS

β-FeSi₂; First Principle Calculation; Electronic Structure

Cite this paper

L. Peng and A. He, "First Principle Study on the Electric Structure of β-FeSi₂ with Native Point Defects," Modeling and Numerical Simulation of Material Science, Vol. 3 No. 1B, 2013, pp. 13-15. doi: 10.4236/mnsms.2013.31B004.

Conflicts of Interest

The authors declare no conflicts of interest.

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