Sulphurization of the Electrochemically Deposited Indium Sulphide Oxide Thin Film and Its Photovoltaic Applications

Ashraf M. A. Haleem, Mutsumi Sugiyama, Masaya Ichimura

Fayoum University, Fayoum, Egypt.
Nagoya Institute of Technology, Nagoya, Japan.
Tokyo University of Science, Tokyo, Japan.

DOI: 10.4236/msa.2012.311116                

Abstract

The post-deposition heat treatment (annealing) for the electrochemically deposited thin film is often necessary in order to improve its crystallinity. In the present study, the electrochemically deposited indium sulfide oxide thin film was annealed in sulphure atmosphere for 60 min at 150℃ and 300℃. The impact of the annealing process on the composition, crystal structure, and surface morphology of the thin film was investigated. In addition, superstrate heterojunction solar cells based on the annealed film as a buffer layer and tin sulphide as an active layer were fabricated and characterized. They showed diode-like behavior under dark condition and a relatively small photovoltaic effect under AM1.5 illumination condition.

Keywords

Indium Sulphide Oxide; Electrochemical Depositon; Thin Films; Sulphurization; Cd-Free Buffer Layer; Solar Cells

Conflicts of Interest

The authors declare no conflicts of interest.

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