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Three-Photon Absorption in Zno Film Using Ultra Short Pulse Laser

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DOI: 10.4236/jmp.2012.38112    4,083 Downloads   6,675 Views   Citations

ABSTRACT

The three-photon absorption (3PA) in nanostructure wide-band gap ZnO semiconductor material is observed under high intensity femtosecond Titanium-Sapphire laser of 800 nm wavelength excitation. The ZnO film was prepared by chemical spray pyrolysis technique with substrate temperature of 400℃. The optical properties concerning the absorp-tion, transmission, reflection, Raman and the photoluminescence spectra are studied for the prepared film. The structure of the ZnO film was tested with the X-Ray diffraction and it was found to be a polycrystalline with recognized peaks oriented in (002), and (102). The measured of three photon absorption coefficient was found to be about 0.0166 cm3/Gwatt2, which is about five times higher than the bulk value. The fully computerized z-scan system was used to measure the nonlinear coefficients from the Gaussian fit of the transmitted laser incident.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

R. Jamal, M. Hussein and A. Suhail, "Three-Photon Absorption in Zno Film Using Ultra Short Pulse Laser," Journal of Modern Physics, Vol. 3 No. 8, 2012, pp. 856-864. doi: 10.4236/jmp.2012.38112.

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