// var cookieName = "pdfddcookie"; // var cookieValue = null; //返回cookie的value值 // if (document.cookie != null && document.cookie != '') { // var cookies = document.cookie.split(';'); //将获得的所有cookie切割成数组 // for (var i = 0; i < cookies.length; i++) { // var cookie = cookies[i]; //得到某下标的cookies数组 // if (cookie.substring(0, cookieName.length + 2).trim() == cookieName.trim() + "=") {//如果存在该cookie的话就将cookie的值拿出来 // cookieValue = cookie.substring(cookieName.length + 2, cookie.length); // break // } // } // } // if (cookieValue != "" && cookieValue != null) {//如果存在指定的cookie值 // return false; // } // else { // // return true; // } // } // function ShowTwo(webUrl){ // alert("22"); // $.funkyUI({url:webUrl,css:{width:"600",height:"500"}}); // } //window.onload = pdfdownloadjudge;
JMMCE> Vol.11 No.7, July 2012
Share This Article:
Cite This Paper >>

Influence of Sputter Deposition Time on the Growth of c-Axis Oriented AlN/Si Thin Films for Microelectronic Application

Abstract Full-Text HTML Download Download as PDF (Size:563KB) PP. 724-729
DOI: 10.4236/jmmce.2012.117059    4,773 Downloads   6,519 Views   Citations
Author(s)    Leave a comment
V. VasanthiPillay, K. Vijayalakshmi

Affiliation(s)

Department of Physics, Bishop Heber College, Tiruchirappalli, Tamil Nadu, India.
Department of Physics, Sujatha Degree and PG college for women, Hyderabad, AndhraPradesh, India.

ABSTRACT

Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optical and electrical properties of the film were investigated. XRD measurements showed the presence of hexagonal wurtzite structure. The optical reflectance spectra of the film were taken and the band gap calculated varied from 4.35 to 5.3 eV. Finally MIS capacitors were fabricated on silicon substrates and variation of dielectric parameter with deposition time was reported.

KEYWORDS

Aluminum Nitride; Thin Films; Sputtering; Preferential Orientations

Cite this paper

V. VasanthiPillay and K. Vijayalakshmi, "Influence of Sputter Deposition Time on the Growth of c-Axis Oriented AlN/Si Thin Films for Microelectronic Application," Journal of Minerals and Materials Characterization and Engineering, Vol. 11 No. 7, 2012, pp. 724-729. doi: 10.4236/jmmce.2012.117059.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] B. Mednikarov, G. Spasov, Tz. Babeva, Aluminum nitride layer prepared by Dc/RF magnetron sputtering, Journal of Optoelectronics and Advanced Materials, Vol. 7, No. 3, June 2005, p.1421-1427
[2] T. P. Drusedau, J. Blasing, Optical and structural properties of highly c-axis oriented aluminum nitride prepared by sputter-deposition in pure nitrogen, Thin Solid Films 377-378, (2000) 27.
[3] X. H. Ji, S. P. Lau, G. Q. Yu, W. H. Zhong, B. K. Tay, Structural properties and nanoindentation of AlN films by a filtered cathodic vacuum arc at low temperature, J. Phys. D: Appl. Phys. 37, (2004) 1472
[4] M.Clement, L.Vergara, J.Sangardor, E.Iborra, A.Sanz-Herras, SAW Characteristics of AlN films sputtered on silicon substrates, Ultrasonic 42 (2004) 403.
[5] T.Palacios, F.Calle, E.Monroy, J.Grajal, M.Eickhoff, O.Ambacher, C.Prieto, Nanotechnology for SAW devices on AlN epilayers, Mat.Sci.Eng.B93 (2000) 154.
[6] H.Gong, X.Jiang, C-axis oriented AlN films prepared on diamond film substrate by electron cyclotron resonance plasma enhanced chemical vapour depositon.J.Crystal Growth 235 (2000) 1.
[7] A.J.Shuskus, T.M.Reeder, E.L.Paradis, Rf-sputtered aluminum nitride films on sapphire, Appl.Phys.Lett.24 (4) (1974) 155.
[8] M.Ishihara, K.Yamamoto, F.Kokai,Y.Koga, Aluiminum nitride thin films prepared by radical –assisted pulsed laser deposition, Vaccum 59(2-3)(2000) 649.
[9] L.Huang, X.D.Wang, K.W.Hipps, U.Mazur, R.Heffron, J.T.Dickinson, Chemical etching of ion beam deposited AlN and AlN: H, thin Solid Films 279(1-2) (1996) 43.
[10] M.M.D.Ramos, J.B.almeida, M.i.C.Ferrerira, M.P.D.Santos, Thin film deposition by magnetron sputtering and determination of some physical parameters, Thin Solid Films 176 (1989) 219.
[11] J.Huang, L.Wang, Q.Shen.C.Lin, O.Milae; Preparation of AlN films by nitridation of Al coated Si sunstrate, Thin Solid films 340 (1999) 137.
[12] V.Dimitrova, D.Monova, T.Paskova, TZ.Uzunov, N.Lvanoc, D.Dechev, Vaccum 51 Aluminum nitride thin films deposited by DC reactive magnetron sputtering, (1998) 161.
[13] M.Ishihara, K.Yamamoto, F.Kokai, Y.Koga, Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition, Jpn JAppl Phys 2001; 40:575.
[14] H.Cheng, Y.Sun, J.X.Zhang, S.Yuan, P.Hing, AlN films deposited under various nitrogen concentrations by RF reactive Sputtering, Journal of Crystal Growth 254 (2003) 46.
[15] X.H.Xu, C.J.Zhang, Z.H.Jin, Morphological properties of AlN piezoelectric thin films deposited by Dc reactive magnetron sputtering Thin Solid Films 388 (2001) 62.
[16] Z.Q.Yao, Y.Q.Li, J.X. Tang, W.J.Zhang, S.T.Lee, Growth and Photoluminescence studies of AlN thin films with different orientation degrees, Diamond and Related Materials 17 (2008) 1785
[17] V.dimitrova, D.Manova, E.Valcheva, Optical and dielectric properties of DC magnetron sputtered AlN thin films correlated with deposition conditions, Mat.sci.Eng.B68 (1999) 1-4.
[18] K.Jagannadham, A.K.Sharma, Q.Wei, R.Kalayanraman, J.Narayan, J.Vac. Sci. Technol., A, Vac. Surf. Films 16 (1998) 2804
[19] T. Adam, J. Kolodzey, C. P. Swann, M. W. Tsao and J. F. Rabolt, 175-176 (2001) 428-435.

  
comments powered by Disqus
JMMCE Subscription
E-Mail Alert
JMMCE Most popular papers
Publication Ethics & OA Statement
JMMCE News
Frequently Asked Questions
Recommend to Peers
Recommend to Library
Contact Us

Copyright © 2020 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.