Optical Properties of Polycrystalline Zinc Selenide Thin Films
Umesh Khairnar, Sulakshana Behere, Panjabrao Pawar
DOI: 10.4236/msa.2012.31006   PDF   HTML     6,475 Downloads   12,017 Views   Citations


Thin films of ZnSe have been deposited onto glass substrates at 373 K by thermal evaporation technique. The X-ray diffractogram confirmed that ZnSe has cubic type crystal structure. The lattice parameters of thin films are almost matching with the JCPDS 5 - 552 data for Zinc Selenide. The transmittance and reflectance have been measured at normal and near normal incidence, respectively, in the spectral range 200 - 2500 nm. The dependence of absorption coefficient, α in the photon energy have been determined. Analysis of the result showed that films of different thicknesses, direct transition occurs with band gap energies ranges from 2.2 to 2.6 eV. Refractive indices and extinction coefficients have been evaluated in the above spectral range.

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U. Khairnar, S. Behere and P. Pawar, "Optical Properties of Polycrystalline Zinc Selenide Thin Films," Materials Sciences and Applications, Vol. 3 No. 1, 2012, pp. 36-40. doi: 10.4236/msa.2012.31006.

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The authors declare no conflicts of interest.


[1] B. B. Ismaiel and R. D. Gold, “Structural and Electrical Properties of Evaporated Thin Films of Cadmium Telluride,” Physica Status Solidi A, Vol. 115, No. 1, 1989, pp. 237-245. doi:10.1002/pssa.2211150126
[2] K. L. Chopra and S. R. Das, “Thin Film Solar Cells,” Ple- num Press, New York, 1983.
[3] C. S. Yang, Y. P. Hsieh, M. C. Kuo, P. Y. Tseng, Z. W. Yeh, K. C. Chiu, J. L. Shen, A. H. M. Chu, W. C. Chou and W. H. Lan, “Compressive Strain Induced Heavy Hole and Light Hole Splitting of Zn1-xCdxSe Epilayers Grown by Molecular Beam Epitaxy,” Materials Chemistry and Physics, Vol. 78, No. 3, 2003, pp. 602-607. doi:10.1016/S0254-0584(01)00585-5
[4] B. Mokili, Y. Charreire, R. Cortes and D. Lincot, “Extended X-Ray Absorption Fine Structure Studies of Zinc Hydroxo-Sulphide Thin Films Chemically Deposited from Aqueous Solution,” Thin Solid Films, Vol. 288, No. 1-2, 1996, pp. 21-28. doi:10.1016/S0040-6090(96)08805-0
[5] L. N. Tripathi, S. K. Mistra and R. N. Singh, “Luminescence in ZnSe doped with Pr and (Sn, Pr) Phosphers,” Indian Journal of Pure and Applied Physics, Vol. 31, 1993, pp. 899-906.
[6] G. K. M. Thutupalli and S. G. Tomlin, “The Optical Properties of Thin Films of Cadmium and Zinc Selenides and Tellurides,” Journal of Physics D: Applied Physics, Vol. 9, No. 11, 1976, pp. 1639-1646. doi:10.1088/0022-3727/9/11/010
[7] R. Kuzel, Jr., V. Valvoda, M. Chladek, J. Musil and J. Matous, “XRD Microstructural Study of Zn Films Deposited by Unbalanced Magnetron Sputtering,” Thin Solid Films, Vol. 263, No. 2, 1995, pp. 150-158. doi:10.1016/0040-6090(95)06575-X
[8] K. L. Chopra R. C. Kainthla, D. K. Pandya and A. P. Thakoor, In: G. Hass et al., Eds., “Physics of Thin Films,” Academic Press, Inc., New York, 1982, p. 167.
[9] A. K. Balasubramanian, N. Sankar, S. K. Ramakrishnan and K. Ramachandran, “Thermal Conductivity of ZnSe by Molecular Dynamics Simulation,” Crystal Research and Technology, Vol. 39, No. 6, 2004, pp. 558-563. doi:10.1002/crat.200310224
[10] J. Bang, J. Park, J.-H. Lee, N. Won, J. Nam, J. Lim, B.-Y. Chang, H.-J. Lee, B. Chon, J. Shin, J.-B. Park, J.-H. Choi, K. Cho, S.-M. Park, T. Joo and S. Kim, “ZnTe/ZnSe (Core/Shell) Type-II Quantum Dots: Their Optical and Photovoltaic Properties,” Chemistry of Materials, Vol. 22, No. 1, 2010, pp. 233-240. doi:10.1021/cm9027995
[11] M. El Sherif, F. S. Terra and S. A. Khodier, “Optical Charateristers of Thin ZnSe Films of Different Thicknesses,” Journal of Materials Science: Materials in Electronics, Vol. 7, 1996, pp. 391-395.
[12] J. J. Pankove, “Optical Processes in Semiconductors,” Prentice Hall, Upper Saddle River, 1971.
[13] A. Goswami, “Thin Film Fundamentals,” New Age International Pvt. Ltd., New Delhi, 1996.
[14] Z. P. Guan, Z. H. Zheng, Y. M. Lu, B. J. Yang and X. W. Fan, “Dispersive Optical Bistability in ZnCdSe-ZnSe/ GaAs Strained-Layer Superlattices on Reflection at Room Temperature,” Thin Solid Films, Vol. 263, No. 2, 1995, pp. 203-205. doi:10.1016/0040-6090(95)06532-6
[15] C. A. Estrada, R. A. Zingaro, E. A. Meyers, P. K. Nair and M. T. S. Nair, “Modification of Chemically Deposited ZnSe Thin Films by Ion Exchange Reaction with Copper Ions in Solution,” Thin Solid Films, Vol. 247, No. 2, 1994, pp. 208-212. doi:10.1016/0040-6090(94)90801-X
[16] S. V. Svechnikov and E. B. Kaganovich, “CdSxSe1?x Photosensitive Films: Preparation, Properties and Use for Photodetectors in Optoelectronics,” Thin Solid Films, Vol. 66, No. 1, 1980, pp. 41-54. doi:10.1016/0040-6090(80)90071-1
[17] G. N. Chaudhari, S. Manorama and V. J. Rao, “Deposition of ZnS0.056Se0.944 Thin Films on GaAs(110) Substrates: A New Chemical Growth Technique,” Thin Solid Films, Vol. 208, No. 2, 1992, pp. 243-246. doi:10.1016/0040-6090(92)90650-Z
[18] U. P. Khairnar, D. S. Bhavsar, R. U. Vaidya and G. P. Bha- vsar, “Optical Properties of Thermally Evaporated Cadmium Telluride Thin Films,” Materials Chemistry and Physics, Vol. 80, No. 2, 2003, pp. 421-427. doi:10.1016/S0254-0584(02)00336-X
[19] E. Khawaja and S. G. Tomlin, “The Optical Constants of Thin Evaporated Films of Cadmium and Zinc Sulphides,” Journal of Physics D: Applied Physics, Vol. 8, No. 5, 1975, pp. 581-594. doi:10.1088/0022-3727/8/5/019
[20] S. Soundeswaran, O. Senthil Kumar, R. Dhanasekaran, P. Ramasamy, R. Kumaresen and M. Ichimura, “Growth of ZnSe Thin Films by Electrocrystallization Technique,” Materials Chemistry and Physics, Vol. 82, No. 2, 2003, pp. 268-272. doi:10.1016/S0254-0584(03)00226-8
[21] N. El-Kadry, A. Ashour and S. A. Mahmoud, “Structural Dependence of d.c. Electrical Properties of Physically Deposited CdTe Thin Films,” Thin Solid Films, Vol. 269, No. 1-2, 1995, pp. 112-116. doi:10.1016/0040-6090(95)06869-4
[22] Y. Fan, J. Han, L. He, J. Saraie and R. L. Gunshor, “Graded Band Gap Ohmic Contact to P-ZnSe,” Applied Physics Letters, Vol. 61, No. 26, 1992, pp. 3160-3162. doi:10.1063/1.107945

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