The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell
Wagah F. Mohammad
DOI: 10.4236/cs.2012.31007   PDF    HTML   XML   4,153 Downloads   7,757 Views   Citations


The In-doped CdTe/Si (p) heterostruture was fabricated and its electrical and photoelectrical properties were studied and interpreted. During the fabrication processes of CdTe/Si heterojunction, some practical troubles were encountered. However, the important one was the formation of the SiO2 thin oxide layer on the soft surface of the Si during the formation of the back contact. The silicon wafer was subjected to different chemical treatments in order to remove the thin oxide layer from the silicon wafer surfaces. It was found that the heterojunction with Si (p+) substrate gave relatively high open circuit voltage comparing with that of Si (p) substrate. Also an electroforming phenomenon had been observed in this structure for the first time which may be considered as a memory effect. It was observed that there are two states of conduction, non-conducting state and conducting state. The normal case is the non-conducting state. As the forward applied voltage increased beyond threshold value, it switches into the conducting state and remains in this state even after the voltage drops to zero.

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W. Mohammad, "The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell," Circuits and Systems, Vol. 3 No. 1, 2012, pp. 42-47. doi: 10.4236/cs.2012.31007.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] L. M. Woods, D. H. Levi, V. Kaydonov, G. Y. Robinson, and R. K. Ahrenkiel, “Electrical Characterization of CdTe Grain Boundary Properties from as-Processed CdTe/CdS Solar Cells,” 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, pp. 1043-1049.
[2] P. Fernández, J. Solisa and J. Piqueras, “Pulsed Laser Annealing of CdTe Single Crystals,” Journal of Optoelectronics and Advanced Materials, Vol. 2, No. 3, 2000, pp. 235-240.
[3] W. F. Mohamed and M. A. Shehathah, “The Electrical Properties of Post-Deposition Annealed and As-Deposited In-doped CdTe Thin Films,” Renewable Energy Journal, Vol. 26, 2002, pp. 285-294. doi:10.1016/S0960-1481(00)00195-6
[4] X. Mathew, J. P. Enriquez, A. Romeo and A. N. Tiwari, “CdTe/CdS Solar Cells on Flexible Substrates,” Solar Energy Journal, Vol. 77, 2004, pp. 831-838. doi:10.1016/j.solener.2004.06.020
[5] T. Potlog, “Development of New Techniques of CdS/ CdTe Solar Cell Enhancement,” International Semiconductor Conference, Sinaia, 27-29 September 2006, pp. 171-174. doi:10.1109/SMICND.2006.283960
[6] D. H. Levi, L. M. Woods, D. S. Albin and T. A. Gessert, “The Influence of Grain Boundary Diffusion on the Electro-Optical Properties of CdTe/CdS Solar Cells, Austria,” 6-2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 10 July 1998. pp. 1057-1062.
[7] G. Khrypunov, A. Romeo, F. Kurdesau, D. Batnzer, H. Zogg and D. L. Tiwari, “Recent Development in Evaporated CdTe Solar Cells,” Solar Energy Material and Solar Cells, Vol. 90, 2006, pp. 664-677. doi:10.1016/j.solmat.2005.04.003
[8] S. Hegedus, D. Desai and C. Thompson, “Voltage Dependent Photocurrent Collection in CdTe/CdS Solar Cells,” Progress in Photovoltaics: Research and Applications, Vol. 15, No. 7, 2007, pp. 587-602. doi:10.1002/pip.767
[9] W. F. Mohamed and M. A. Shehathah, “The Effect of the Series Resistance on the Photovoltaic Properties of In-Doped CdTe (p) Thin Film Homojunction Structure,” Renewable Energy Journal, Vol. 21, No. 2, 2000, pp. 141-152. doi:10.1016/S0960-1481(00)00008-2
[10] A. W. Brinkman and S. M. Al-Amri, “Thin Film CdTe Based Solar Cell,” Proceedings of the Sixth Arab International Solar Energy Conference, Muscat, Sultanate of Oman, 29 March 1998, p. 752.
[11] W. Huber and A. Lopez, “The Electrical Properties of CdTe Films Grown by Hot Wall Epitaxy,” Thin Solid Films, Vol. 58, 1979, pp. 21-27. doi:10.1016/0040-6090(79)90201-3
[12] Y. G. Xiao, Z. Q. Li, M. Lestrade and Z. M. Simon Li, “Modeling of CdZnTe/CdTe/Si Triple Junction Solar Cells,” 37th IEEE Photovoltaic Specialists Conference PVSC, No. 604, 2011, pp. 14-16.
[13] S. Park, E. Cho, D. Song, G. Conibeer and M. Green, “n-Type Silicon Quantum Dots and p-Type Crystalline Silicon Heteroface Surface Solar Cells,” Solar Energy Materials & Solar Cells, Vol. 93, No. 6-7, 2009, pp. 684-690. doi:10.1016/j.solmat.2008.09.032
[14] S. Saha, U. Pal, B. K. Samantaray, A. K. Chaudhuri, H. D. Banerjee, “Structural Characterization of Thin films Cadmium Telluride,” Thin Solid Films, Vol. 164, 1988. pp. 85-89. doi:10.1016/0040-6090(88)90114-9
[15] W. F. Mohamad and A. M. Mustafa, “The Influence of Defects on Short Circuit Current Density in p-I-n Silicon Solar Cell,” Renewable Energy Journal, Vol. 30 No. 2, 2005, pp. 187-193. doi:10.1016/j.renene.2004.03.012
[16] W. F. Mohamad, A. Abuhajar and A. N. Saleh, “Effect of Oxide Layers and Metals on Photoelectric and Optical Properties of Schottky Barrier Photo Detector,” Renew- able Energy Journal, Vol. 31, No. 10, 2006, pp. 1493-1503. doi:10.1016/j.renene.2005.12.012
[17] A. M. Al-Dhafri, “Photovoltaic Properties of CdTe/ Cu2Te,” Renewable Energy Journal, Vol. 14, No. 1-4, 1998, pp. 141-147.
[18] W. F. Mohamad and L. S. Ali, “Digital and Analogue storage Capability of Al/SiO2/Si Structures,” Asian Journal of Information technology, Vol. 5, No. 1, 2006. pp. 1-5.

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