Temperature Dependence of Current-Voltage Characteristics in Individual Sb2Se3 Nanowire
Kien-Wen Sun, Ting-Yuan Fan
DOI: 10.4236/msa.2010.11002   PDF   HTML     5,112 Downloads   9,465 Views   Citations


We demonstrated techniques toward nanoscale thermometries by using a hydrothermally prepared single Sb2Se3 nanowire. Suitable electrodes were fabricated to make electrical contact with a nanowire on a silicon substrate by combining techniques of dielectrophoresis, electron beam (e-beam) lithography, and focused ion beam (FIB). Measurements of temperature-dependent electrical resistivity were carried out from room temperature up to 525 K. The current-voltage characteristics showed linear and symmetric behavior through the entire temperature range, which indicated that the contacts are ohmic. The resistance of the single Sb2Se3 nanowire decreased with increasing temperature. However, a larger thermal activation energy of ~ 4.2 eV was found near a temperature above 420 K. We speculate that the reduction of resistance at a higher temperature was due to the breakdown of grain boundary barriers.

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K. Sun and T. Fan, "Temperature Dependence of Current-Voltage Characteristics in Individual Sb2Se3 Nanowire," Materials Sciences and Applications, Vol. 1 No. 1, 2010, pp. 8-12. doi: 10.4236/msa.2010.11002.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] Y. B. Li, Y. Bando, D. Golberg and Z. W. Liu, “Ga-Filled Single-Crystalline MgO Nanotube: Wide-Temperature Range Nanothermometer,” Applied Physics Letters, Vol. 83, 2003, pp. 999-1001.
[2] W. Haeberle, M. Pantea and J. K. H. Hoerber, “Nanometer-Scale Heat-Conductivity Measurements on Biological samples,” Ultramiscroscopy, Vol. 106, 2006, pp. 678- 686.
[3] H. H. Roh, J. S. Lee, D. L. Kim, J. Park, K. Kim, O. Kwon, S. H. Park, Y. K. Choi and A. Majumdar, “Novel Nanoscale Thermal Property Imaging Technique: The 2ω Method. II. Demonstration and Comparison,” Journal of Vacuum Science and Technology, Vol. B24, 2006, pp. 2405-2411.
[4] L. Chow, D. Zhou and F. Stevie, “Fabrication of Nanoscale Temperature Sensors and Heaters,” U. S. Patent 6905736, 14 June 2005.
[5] Y. Okamura and T. Kohler, “Fabrication of Nanoscale Thermoelectric Devices,” U. S. Patent 6969679, 29 November 2005.
[6] H. Aizawa, T. Katsumata, S. Komuro, T. Morikawa, H. Ishizawa and E. Toba, “Fluorescence Thermometer Based on the Photoluminescence Intensity Ratio in Tb Doped Phosphor Materials,” Sensors and Actuators, Vol. A126, 2006, pp. 78-82.
[7] S. Chowdhury, C. Maris, F. H.-T. Allain and F. Narberhaus, “Molecular Basis for Temperature Sensing by an RNA Thermometer,” European Molecular Biology Organization Journal, Vol. 25, 2006, pp. 2487-2497.
[8] T. Waldminghaus, A. Fippinger, J. Alfsmann and F. Narberhaus, “RNA Thermometers are Common in α- and γ-proteobacteria,” Biological Chemistry, Vol. 386, 2005, pp. 1279-1286.
[9] J. Lee, A. O. Govorov and N. A. Kotov, “Nanoparticle Assemblies with Molecular Springs: A Nanoscale Thermometer,” Angewandte Chemie, Vol. 117, 2005, pp. 7605-7608.
[10] N. S. Platakis and H. C. Gatos, “Threshold and Memory Switching in Crystalline Chalcogenide Materials,” Physica Status Solidi, Vol. A13, 1972, pp. K1-K4.
[11] J. Black, E. M. Conwell, L. Sigle and C. W. Spencer, “Electrical and Optical Properties of Some M2 Ⅴ-B N3 Ⅵ-B Semiconductors,” Journal of Physics and Chemistry of Solids, Vol. 2, 1957, pp. 240-251.
[12] K. Y. Rajapure, C. D. Lokhande and C. H. Bhosele, “Effect of the Substrate Temperature on the Properties of Spray Deposited Sb-Se Thin Films from Non-Aqueous Medium,” Thin Solid Films, Vol. 311, 1997, pp. 114-118.
[13] H.-W. Chang, B. Sarkar and C. W. Liu, “Synthesis of Sb2Se3 Nanowires via a Solvothermal Route from the Single Source Precursor Sb[Se2P(OiPr)2]3,” Crystal Growth & Design, Vol. 7, 2007, pp. 2691-2695.
[14] Y.-F. Lin, H.-W. Chang, S.-Y. Lu and C. W. Liu, “Preparation, Characterization, and Electrophysical Properties of Nanostructured BiPO4 and Bi2Se3 Derived from a Structurally Characterized, Single-Source Precursor Bi[Se2P(OiPr)2]3,” Journal of Physical Chemistry C, Vol. 111, 2007, p. 18538.
[15] K. Yamamoto, S. Akita and Y. Nakayama, “Orientation of Carbon Nanotubes Using Electrophoresis,” Japanese Journal of Applied Physics, Vol. 35, 1996, pp. L917- L918.
[16] K. Yamamoto, S. Akita and Y. Nakayama, “Orientation and Purification of Carbon Nanotubes Using Ac Electrophoresis,” Journal of Physics D: Applied Physics, Vol. 31, 1998, pp. L34-L36.
[17] W. B. Choi, Y. W. Jin, H. Y. Kim, S. J. Lee, M. J. Yun, J. H. Kang, Y. S. Choi, N. S. Park, N. S. Lee and J. M. Kim, “Electrophoresis Deposition of Carbon Nanotubes for Triode-Type Field Emission Display,” Applied Physics Letters, Vol. 78, 2001, pp. 1547-1549.
[18] J. Suehiro, G. Zhou and M. Hara, “Fabrication of a Carbon Nanotube-Based Gas Sensor Using Dielectrophoresis and its Application for Ammonia Detection by Impedance Spectroscopy,” Journal of Physics D: Applied Physics, Vol. 36, 2003, pp. L109-L114.
[19] S. M. Sze and K. K. Ng, “Physics of Semiconductor Device,” 3rd Edition, Wiley, New York, 2007, pp. 21-25.
[20] R. Smith, “Semiconductors,” Cambridge University Press, London, 1980, pp. 18-19.
[21] X. Ma, Z. Zhang, X. Wang, S. Wang, F. Xu and Y. Qian, “Large-Scale Growth of Wire-Like Sb2Se3 Microcrystallines via PEG-400 Polymer Chain-Assisted Route,” Journal of Crystal Growth, Vol. 263, 2004, pp. 491-497.

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