Simulation Study of 50 nm Gate Length MOSFET Characteristics - Advances in Materials Physics and Chemistry

AMPC > Vol.13 No.6, June 2023

Advances in Materials Physics and Chemistry

Volume 13, Issue 6 (June 2023)

ISSN Print: 2162-531X ISSN Online: 2162-5328

Google-based Impact Factor: 0.63 Citations

Simulation Study of 50 nm Gate Length MOSFET Characteristics ()

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Download as PDF (Size: 3797KB) PP. 121-134

DOI: 10.4236/ampc.2023.136009 263 Downloads 1,373 Views Citations

Author(s)

Towhid Adnan Chowdhury

Affiliation(s)

Department of Electrical & Electronic Engineering, Ahsanullah University of Science & Technology, Dhaka, Bangladesh.

ABSTRACT

With the need to improvement of speed of operation and the demand of low power MOSFET size scales down, in this paper, a 50 nm gate length n-type doped channel MOS (NMOS) is simulated using ATLAS packages of Silvaco TCAD Tool so as to observe various electrical parameters at this gate length. The parameters under investigation are the threshold voltage, subthreshold slope, on-state current, leakage current and drain induced barrier lowering (DIBL) by varying channel doping concentration, drain and source doping concentration and gate oxide thickness.

KEYWORDS

MOSFET, Threshold Voltage, Subthreshold Slope, Leakage Current, TCAD

Share and Cite:

Chowdhury, T. (2023) Simulation Study of 50 nm Gate Length MOSFET Characteristics. Advances in Materials Physics and Chemistry, 13, 121-134. doi: 10.4236/ampc.2023.136009.

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