Author(s)

Donafologo Soro^1*, Adama Sylla², N’Guessan Armel Ignace², Aboudoulaye Toure³, Amal Bouich³, Siaka Toure², Bernabé Marí³

¹Department of Science and Technology, Ecole Normale Supérieure (ENS) of Abidjan, Abidjan, Ivory Coast.
²Solar Energy Laboratory, FHB University of Abidjan-Cocody, Abidjan, Ivory Coast.
³Department ofApplied Physics-IDF, Polytechnic University of Valencia, Valencia, Spain.

In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe₂/p + -MoSe₂/Mo/SLG. When the thickness of the CIGSe₂ absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe₂ remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe₂. To achieve the expected results, the MoSe₂ layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe₂ interface layer.

CIGS, Molybdenum Diselenide (MoSe₂), AFORS-HET, Simulation, Efficiency

Soro, D. , Sylla, A. , Ignace, N. , Toure, A. , Bouich, A. , Toure, S. and Marí, B. (2022) Simulation of a CIGS Solar Cell with CIGSe₂/MoSe₂/Mo Rear Contact Using AFORS-HET Digital Simulation Software. Modeling and Numerical Simulation of Material Science, 12, 13-23. doi: 10.4236/mnsms.2022.122002.