Acoustoelectric effect (AE) in a non
-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime
, where
q is the acoustic wavenumber and
is the electron mean
-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density
, on
(
is the electron drift velocity and
is the speed of sound in the medium) was observed and depends on the acoustic wave frequency,
, wavenumber
q, temperature
T and the electron
-phonon interactions parameter,
. When
,
decreases to a resonance minimum and increases again, where the FSWCNT is said to be amplifying the current. Conversely, when
,
rises to a maximum and starts to decrease, similar to the observed behaviour in negative differential conductivity which is a consequence of Bragg’s reflection at the band edges at
T=300K. However, FSWCNT will offer the potential for room temperature application as an acoustic switch or transistor and also as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone devices in biomedical engineering. Moreover, our results prove the feasibility of implementing chip
-scale non
-reciprocal acoustic devices in an FSWCNT platform through acoustoelectric amplification.