Author(s)

Nouh Mohamed Moctar Ould Mohamed¹, Ousmane Sow², Sega Gueye¹, Youssou Traore¹, Ibrahima Diatta¹, Amary Thiam¹, Mamour Amadou Ba¹, Richard Mane¹, Ibrahima Ly³, Gregoire Sissoko¹

¹Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
²University Institute of Technology, University of Thiès, Thiès, Sénégal.
³Ecole Polytechnique de Thiès, Thiès, Sénégal.

The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.

Silicon Solar Cell, Diffusion Coefficient, Surface Recombination Velocity, Optimum Base Thickness, Lorentz and Umklapp Processes

Mohamed, N. , Sow, O. , Gueye, S. , Traore, Y. , Diatta, I. , Thiam, A. , Ba, M. , Mane, R. , Ly, I. and Sissoko, G. (2019) Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination. Journal of Modern Physics, 10, 1596-1605. doi: 10.4236/jmp.2019.1013105.