Journal of Electromagnetic Analysis and Applications

Volume 11, Issue 10 (October 2019)

ISSN Print: 1942-0730   ISSN Online: 1942-0749

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Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

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DOI: 10.4236/jemaa.2019.1110012    312 Downloads   595 Views   Citations

ABSTRACT

In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

Cite this paper

Ba, M. , Thiam, N. , Thiame, M. , Traore, Y. , Diop, M. , Ba, M. , Sarr, C. , Wade, M. and Sissoko, G. (2019) Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles. Journal of Electromagnetic Analysis and Applications, 11, 173-185. doi: 10.4236/jemaa.2019.1110012.

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