Author(s)

Honei Chin^1,2, Satoshi Yoshida¹, Shuichi Watanabe^3*

¹Mechanical Systems Engineering Major, Graduate School of Engineering, Nippon Institute of Technology, Saitama, Japan.
²USTRON Co. Ltd., Tokyo, Japan.
³Department of Applied Chemistry, Faculty of Fundamental Engineering, Nippon Institute of Technology, Saitama, Japan.

In this article, the authors report on the use of Radio Frequency (RF) Magnetron Sputtering combined with Plasma-Based Ion Implantation (PBII) technique to synthesize the Boron-Carbon (B-C) films. High purity of boron carbide (99.5%) disk was used as a target with an RF power of 300 W. The mixtures of Argon (Ar)-Methane (CH₄) ware used as reactive gas under varying CH₄ partial flow pressure at the specified range of 0 - 0.15 Pa and fixed total gas pressure and total gas flow at 0.30 Pa and 30 sccm, respectively. The effect of CH₄ flow ratio on the friction coefficient of B-C films was studied. The friction coefficient of the film depended on the concentration of B. When it was 10% or lower, the coefficient decreased to 0.2 or lower. In this concentration range of B, the specific wear rate also decreased to the order of 10^-7 mm³/Nm, and excellent wear resistance was displayed.

Binary Boron-Carbon (B-C) Film, Sputtering, Plasma-Based Ion Implantation (PBII), Hybrid System, Bonding Structure, Friction Performance

Chin, H. , Yoshida, S. and Watanabe, S. (2018) Tribological Behavior of Binary B-C Films Deposited by Sputtering-PBII Hybrid System. Materials Sciences and Applications, 9, 723-731. doi: 10.4236/msa.2018.99052.