Author(s)

Ousmane Diasse¹, Amadou Diao¹, Mamadou Wade², Marcel Sitor Diouf¹, Ibrahima Diatta¹, Richard Mane¹, Youssou Traore¹, Gregoire Sissoko¹

¹Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
²Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal.

In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe, Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier’s density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.

Silicon Solar Cell, Surface Recombination Velocity, Thickness

Diasse, O. , Diao, A. , Wade, M. , Diouf, M. , Diatta, I. , Mane, R. , Traore, Y. and Sissoko, G. (2018) Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State. Journal of Modern Physics, 9, 189-201. doi: 10.4236/jmp.2018.92012.