Optics and Photonics Journal

Volume 6, Issue 8 (August 2016)

ISSN Print: 2160-8881   ISSN Online: 2160-889X

Google-based Impact Factor: 0.76  Citations  h5-index & Ranking

Simulation and Characteristics Improvement of Quantum Dot Slow Light Devices by Geometrical Dimension Alteration

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DOI: 10.4236/opj.2016.68B019    1,344 Downloads   2,365 Views  Citations

ABSTRACT

In this paper we simulate and analyze a sample of slow light semiconducting device with quantum dot structure based on coherent population oscillation (CPO). The simulation is conducted to enhance the main parameters of slow light device and a method is presented for setting the output specifications of this kind of devices. In this paper, we deal with changing the size of quantum dot to find the ideal size. The simulation results indicate that as the size of quantum dot changes properly (with reducing more than 50 percent of quantum dots both radius and height), then the slope of diagram of the real part of refractive index increases significantly so that the Slow Down Factor (SDF) predicted to be18 times greater. Analysis and simulations based on cylinderical quantum dots structure slow light devices based on exitonic cpo.

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Choupanzadeh, B. , Kaatuzian, H. , Kohandani, R. and Abdolhosseini, S. (2016) Simulation and Characteristics Improvement of Quantum Dot Slow Light Devices by Geometrical Dimension Alteration. Optics and Photonics Journal, 6, 114-119. doi: 10.4236/opj.2016.68B019.

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