Open Access Library Journal

Volume 2, Issue 8 (August 2015)

ISSN Print: 2333-9705   ISSN Online: 2333-9721

Google-based Impact Factor: 0.73  Citations  

Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

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DOI: 10.4236/oalib.1101562    1,272 Downloads   2,071 Views  Citations

ABSTRACT

Hysteresis phenomenon in the capacitance-voltage characteristics under reverse-biased Schottky gate has been investigated for Al0.25Ga0.75N/GaN/SiC structures having three different gate surfaces. This parasitic effect was correlated with the presence of deep levels in our samples. Indeed, we have noticed the presence of two traps named H1 and A1; their respective activation energies, which are determined using capacitance deep level transient spectroscopy (DLTS) are respectively 0.74 and 0.16 eV. The H1 hole trap was associated to extended defect in the Al0.25Ga0.75N/ GaN heterostructure such as threading dislocations and was responsible of capacitance hysteresis phenomenon. The A1 electron trap appears only in the HEMT (1), which has the smaller Schottky contact area. This trap was related to a punctual defect and attributed to free surface states in the access region between the gate and the source.

Share and Cite:

Saadaoui, S. , Fathallah, O. , Salem, M. , Gaquière, C. and Maaref, H. (2015) Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces. Open Access Library Journal, 2, 1-6. doi: 10.4236/oalib.1101562.

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