Materials Sciences and Applications

Volume 6, Issue 5 (May 2015)

ISSN Print: 2153-117X   ISSN Online: 2153-1188

Google-based Impact Factor: 1.67  Citations  h5-index & Ranking

Fabrication of Erbium and Ytterbium Co-Doped Tantalum-Oxide Thin Films Using Radio-Frequency Co-Sputtering

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DOI: 10.4236/msa.2015.65039    3,039 Downloads   3,577 Views   Citations

ABSTRACT

An erbium and ytterbium co-doped tantalum-oxide (Ta2 O5:Er, Yb) thin film was fabricated using a simple co-sputtering method for the first time, and its photoluminescence (PL) spectrum was evaluated. Energy transfers between Er3+ and Yb3+ in the Ta2 O5:Er, Yb co-sputtered thin film were discussed by comparing between PL spectra of the Ta2 O5:Er, Yb film and Ta2 O5:Er or Ta2 O5:Yb films reported in our previous works. Such a Ta2 O5:Er, Yb co-sputtered film can be used as a high-refractive- index and light-emitting material of a multilayered photonic crystal that can be applied to a novel light-emitting device, and it will also be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.

Cite this paper

Miura, K. , Arai, Y. , Kano, K. and Hanaizumi, O. (2015) Fabrication of Erbium and Ytterbium Co-Doped Tantalum-Oxide Thin Films Using Radio-Frequency Co-Sputtering. Materials Sciences and Applications, 6, 343-347. doi: 10.4236/msa.2015.65039.

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