Graphene

Volume 2, Issue 1 (January 2013)

ISSN Print: 2169-3439   ISSN Online: 2169-3471

Google-based Impact Factor: 0.25  Citations  

General Scattering Mechanism and Transport in Graphene

HTML  Download Download as PDF (Size: 1105KB)  PP. 49-54  
DOI: 10.4236/graphene.2013.21007    4,344 Downloads   9,111 Views  Citations

ABSTRACT

Using quasi time dependent semiclassical transport theory, within relaxation time approximation, we obtained coupled electronic current equations in the presence of time varying field, and based on general scattering mechanism,. In the vicinity of Dirac points, we find that a characteristic exponent corresponds to acoustic phonon scattering, long range Coulomb scattering mechanism and is short range (delta or contact potential) scattering in which the conductivity is constant of temperature. The case is the ballistic regime. In the low energy dynamics of Dirac electrons in graphene, the effect of the time dependent electric field is to alter just the electron charge by making electronic conductivity nonlinear. The effect of constant magnetic field at finite temperature is also considered.

Share and Cite:

M. Rabiu, S. Mensah and S. Abukari, "General Scattering Mechanism and Transport in Graphene," Graphene, Vol. 2 No. 1, 2013, pp. 49-54. doi: 10.4236/graphene.2013.21007.

Cited by

[1] Temperature dependence of the relaxation time in scattering of elementary excitations in graphene
2021
[2] Electronic resonant tunneling on graphene superlattice heterostructures with a tunable graphene layer
2016
[3] Hydrodynamic study of edge spin-vortex excitations of fractional quantum Hall fluid
Physics Letters A, 2016
[4] Thermoelectric Properties of Bismuth Telluride Nanocomposites Reinforced with Graphene
2016
[5] Роль электростатики и контактов в концепции наноэлектроники снизу–вверх
В?сник Одеського державного еколог?чного ун?верситету, 2015
[6] Наноэлектроника «Снизу-вверх»: начала спинтроники и магнетроники
2015
[7] The Contribution of the Bulk Modes on Electrical Conductivity in 3D Topological Insulators
ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels, 2015
[8] Наноэлектроника «снизу–вверх»: роль электростатики и контактов
ScienceRise, 2015
[9] Наноэлектроника «снизу-вверх»: Роль электростатики и контактов
2015
[10] Уроки наноелектроніки: роль електростатики й контактів у концепції
Сенсорна електрон?ка ? м?кросистемн? технолог??�, 2014
[11] Уроки наноелектроніки: Роль електростатики й контактів у концепції «знизу–вгору»
2014
[12] Фізичні, хімічні та інші явища, на основі яких можуть бути створені сенсори Physical, chemical and other phenomena, as the bases of sensors
Сенсорна електрон?ка ? м?кросистемн? технолог??, 2014

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.