Author(s)

Fouad Kerrour, Ali Boukabache, Patrick Pons

Laboratory of Architecture and Systems Analysis, National Centre of Scientific Research, Toulouse, France.
Modeling of Energy Renewable Devices and Nano-Metric Laboratory, University of Mentouri, Constantine, Algeria.

From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.

Silicon; TCRs, Mobility; Doping; Temperature

F. Kerrour, A. Boukabache and P. Pons, "Modelling of Thermal Behavior N-Doped Silicon Resistor," Journal of Sensor Technology, Vol. 2 No. 3, 2012, pp. 132-137. doi: 10.4236/jst.2012.23019.