We show that Hall-like current can be induced by acoustic phonons in a nondegenerate, semiconductor fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach in the hypersound regime
(
q is the modulus of the acoustic wavevector and
is the electron mean free path). We observed a strong dependence of the Hall-like current on the magnetic field,
H, the acoustic wave frequency,
, the temperature,
T, the overlapping integral,
, and the acoustic wavenumber,
q. Qualitatively, the Hall-like current exists even if the relaxation time
does not depend on the carrier energy but has a strong spatial dispersion, and gives different results compared to that obtained in bulk semiconductors. For
and
, the Hall-like current is
in the absence of an electric field and in the presence of an electric field at 300 K. Similarly, the surface electric field
due to the Hall-like current is
in the absence of an external electric field. In the presence of an external electric field,
and
for
at 300 K.
q and
can be used to tune the Hall-like current and
of the FSWCNT. This offers the potential for room temperature application as an acoustic switch or transistor, as well as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone device in biomedical engineering.