Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications

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International Journal of Communications, Network and System Sciences

ISSN Print: 1913-3715
ISSN Online: 1913-3723
www.scirp.org/journal/ijcns
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"Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications"
written by Masoud Sabaghi, Seyed Reza Hadianamrei, Mehdi Rahnama, Maziyar Niyakan Lahiji,
published by International Journal of Communications, Network and System Sciences, Vol.4 No.10, 2011

has been cited by the following article(s):

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[1]	Design of a miniaturized class F power amplifier using capacitor loaded transmission lines
	2020

[2]	Radio frequency power amplifiers for radar and protable communication systems
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[3]	A modified Class-F power amplifier with miniaturized harmonic control circuit
	AEU - International Journal of Electronics and Communications, 2018

[4]	A Review of Highly Efficient Class F Power Amplifier Design Technique in Gigahertz Frequencies
	2017

[5]	On the design of high-efficiency RF Doherty power amplifiers
	2016

[6]	Class-F power amplifier with 82.9% maximum PAE at 1.89 GHz for LTE applications
	2015 IEEE 16th International Conference on Communication Technology (ICCT), 2015

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