|
[1]
|
Review of a direct epitaxial approach to achieving micro–LEDs
Chinese Physics B,
2023
DOI:10.1088/1674-1056/ac90b5
|
|
|
|
|
[2]
|
Recent Advances on GaN-Based Micro-LEDs
Micromachines,
2023
DOI:10.3390/mi14050991
|
|
|
|
|
[3]
|
Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices
IEEE Journal of Quantum Electronics,
2022
DOI:10.1109/JQE.2022.3166650
|
|
|
|
|
[4]
|
Improved Modulation Bandwidth of Blue Mini-LEDs by Atomic-Layer Deposition Sidewall Passivation
IEEE Transactions on Electron Devices,
2022
DOI:10.1109/TED.2022.3188738
|
|
|
|
|
[5]
|
Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes
Optics Express,
2022
DOI:10.1364/OE.475219
|
|
|
|
|
[6]
|
Super powerful LED luminaires with a high color rendering index for lighting systems with combined electric power supply
Semiconductor Physics, Quantum Electronics and Optoelectronics,
2022
DOI:10.15407/spqeo25.01.097
|
|
|
|
|
[7]
|
Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes
Optics Express,
2022
DOI:10.1364/OE.475219
|
|
|
|
|
[8]
|
Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices
IEEE Journal of Quantum Electronics,
2022
DOI:10.1109/JQE.2022.3166650
|
|
|
|
|
[9]
|
Highly efficient blue InGaN nanoscale light-emitting diodes
Nature,
2022
DOI:10.1038/s41586-022-04933-5
|
|
|
|
|
[10]
|
Improved Modulation Bandwidth of Blue Mini-LEDs by Atomic-Layer Deposition Sidewall Passivation
IEEE Transactions on Electron Devices,
2022
DOI:10.1109/TED.2022.3188738
|
|
|
|
|
[11]
|
Investigation of Electrical Properties of InGaN‐Based Micro‐Light‐Emitting Diode Arrays Achieved by Direct Epitaxy
physica status solidi (a),
2021
DOI:10.1002/pssa.202100474
|
|
|
|
|
[12]
|
MicroLED technologies and applications: characteristics, fabrication, progress, and challenges
Journal of Physics D: Applied Physics,
2021
DOI:10.1088/1361-6463/abcfe4
|
|
|
|
|
[13]
|
Semiconductors and Semimetals,
2021
DOI:10.1016/bs.semsem.2020.12.005
|
|
|
|
|
[14]
|
Micro LEDs
Semiconductors and Semimetals,
2021
DOI:10.1016/bs.semsem.2020.12.005
|
|
|
|
|
[15]
|
Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width
ACS Nano,
2020
DOI:10.1021/acsnano.0c01180
|
|
|
|
|
[16]
|
A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)
ACS Photonics,
2020
DOI:10.1021/acsphotonics.9b01351
|
|
|
|
|
[17]
|
Analysis of InGaN surfaces after chemical treatments and atomic layer deposition of Al2O3 for µLED applications
Gallium Nitride Materials and Devices XV,
2020
DOI:10.1117/12.2544787
|
|
|
|
|
[18]
|
Analysis of InGaN surfaces after chemical treatments and atomic layer deposition of Al2O3 for µLED applications
Gallium Nitride Materials and Devices XV,
2020
DOI:10.1117/12.2544787
|
|
|
|
|
[19]
|
Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading
Nanoscale Research Letters,
2020
DOI:10.1186/s11671-020-03372-3
|
|
|
|
|
[20]
|
Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width
ACS Nano,
2020
DOI:10.1021/acsnano.0c01180
|
|
|
|
|
[21]
|
A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)
ACS Photonics,
2020
DOI:10.1021/acsphotonics.9b01351
|
|
|
|
|
[22]
|
A review of key technologies for epitaxy and chip process of micro light-emitting diodes in display application
Acta Physica Sinica,
2020
DOI:10.7498/aps.69.20200742
|
|
|
|
|
[23]
|
Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes
ECS Journal of Solid State Science and Technology,
2020
DOI:10.1149/2.0302001JSS
|
|
|
|
|
[24]
|
Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices
Surfaces and Interfaces,
2020
DOI:10.1016/j.surfin.2020.100765
|
|
|
|
|
[25]
|
Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments
Optics Express,
2020
DOI:10.1364/OE.384127
|
|
|
|
|
[26]
|
Non-destructive analysis on nano-textured surface of the vertical LED for light enhancement
Ultramicroscopy,
2019
DOI:10.1016/j.ultramic.2018.09.003
|
|
|
|
|
[27]
|
Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al 2 O 3
Nano Energy,
2018
DOI:10.1016/j.nanoen.2017.11.047
|
|
|
|
|
[28]
|
High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition
Optics Express,
2018
DOI:10.1364/OE.26.021324
|
|
|
|
|
[29]
|
Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition
IEEE Transactions on Electron Devices,
2017
DOI:10.1109/TED.2017.2657659
|
|
|
|
|
[30]
|
Characteristics of GaN-Based LEDs With Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures
IEEE Transactions on Electron Devices,
2017
DOI:10.1109/TED.2017.2702651
|
|
|
|
|
[31]
|
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
Superlattices and Microstructures,
2017
DOI:10.1016/j.spmi.2017.11.050
|
|
|
|
|
[32]
|
Low-cost flexible inorganic optical devices for flexible sensors
2017 IEEE SENSORS,
2017
DOI:10.1109/ICSENS.2017.8234359
|
|
|
|
|
[33]
|
High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodes
Thin Solid Films,
2014
DOI:10.1016/j.tsf.2013.11.031
|
|
|
|