Effect of Temperature & Supply Voltage Variation on Stability of 9T SRAM Cell at 45 nm Technology for Various Process Corners

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ISSN Print: 2153-1285
ISSN Online: 2153-1293
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E-mail: cs@scirp.org

"Effect of Temperature & Supply Voltage Variation on Stability of 9T SRAM Cell at 45 nm Technology for Various Process Corners"
written by Manisha Pattanaik, Shilpi Birla, Rakesh Kumar Singh,
published by Circuits and Systems, Vol.3 No.2, 2012

has been cited by the following article(s):

[1]	Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology
	ACM Transactions on Design Automation of …, 2023

[2]	Impact of lanthanum doped zirconium oxide (LaZrO) gate dielectric material on FinFET inverter
	International Journal on Smart Sensing and …, 2020

[3]	Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter
	2020

[4]	Analysis of Static Noise Margin in 6T Sram Cell At 45 And 32 NM Technology.
	2019

[5]	Analoginių signalų registravimas dideliu atskaitų dažniu panaudojant LPLM
	2016

[1]	Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology ACM Transactions on Design Automation of Electronic Systems, 2023 DOI:10.1145/3616538

[2]	Sustainable Development Through Engineering Innovations Lecture Notes in Civil Engineering, 2021 DOI:10.1007/978-981-15-9554-7_50

[3]	Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter International Journal on Smart Sensing and Intelligent Systems, 2020 DOI:10.21307/ijssis-2020-032

[4]	Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter International Journal on Smart Sensing and Intelligent Systems, 2020 DOI:10.21307/ijssis-2020-032

[5]	Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter International Journal on Smart Sensing and Intelligent Systems, 2020 DOI:10.21307/ijssis-2020-032

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